iMobile Mobile Home, August 10th Recently, at the Flash Memory Summit in the United States, SK hynix explained the difference between CTF (charge trapping) and floating gate (floating gate) technology routes, and announced Launched its own 4D flash memory.
Image from the network
According to the on-site technical demonstration document, CTF-based 4D NAND places peripheral circuits under the memory unit, which has greater advantages in chip area and cost control.
In terms of performance, the first 4D NAND model is V5 512Gb TLC, with a chip area of 11.5mm*13mm, 96-layer stacking, and I/O speed of 1.2Gbps. It is expected to be sampled in the fourth quarter of this year. Compared with V4 3D, the read and write speeds increased by 30% and 25% respectively under the premise of 20% reduction in area.
Image from the network
BGA package TLC particle capacity can reach 1Tb (128GB), module supports up to 2TB, can achieve 64TB in 2.5-inch U.2, is expected to be sampled in the first half of 2019.
iMobile Mobile Home, August 10th Recently, at the Flash Memory Summit in the United States, SK hynix explained the difference between CTF (charge trapping) and floating gate (floating gate) technology routes, and announced Launched its own 4D flash memory.
Image from the network
According to the on-site technical demonstration document, CTF-based 4D NAND places peripheral circuits under the memory unit, which has greater advantages in chip area and cost control.
In terms of performance, the first 4D NAND model is V5 512Gb TLC, with a chip area of 11.5mm*13mm, 96-layer stacking, and I/O speed of 1.2Gbps. It is expected to be sampled in the fourth quarter of this year. Compared with V4 3D, the read and write speeds increased by 30% and 25% respectively under the premise of 20% reduction in area.
Image from the network
BGA package TLC particle capacity can reach 1Tb (128GB), module supports up to 2TB, can achieve 64TB in 2.5-inch U.2, is expected to be sampled in the first half of 2019.
