Higher density than traditional 3D NAND storage
Xtacking can independently process peripheral circuits responsible for data I/O and memory cell operations on a single wafer. This processing method facilitates the selection of appropriate advanced logic processes to allow NAND to achieve higher I/O interface speeds and more. Multiple operating functions. The memory unit will also be processed independently on another wafer. When the two wafers are completed, the innovative XtackingTM technology can pass millions of metal VIAs in a single processing step. Accesses, vertical interconnect channels) connect the two to the circuit and add only a limited cost.
In the traditional 3D NAND architecture, the peripheral circuit accounts for about 20~30% of the chip area, which reduces the storage density of the chip. As the 3D NAND technology is stacked to 128 layers or higher, the peripheral circuit may account for 50% of the total chip area. Above. XtackingTM technology places peripheral circuits on top of memory cells to achieve higher storage density than traditional 3D NAND.
Xtacking technology makes full use of the independent processing advantages of memory cells and peripheral circuits, enabling parallel, modular product design and manufacturing, product development time can be shortened by three months, and production cycle can be shortened by 20%, thus greatly shortening the 3D NAND products. Time to market. In addition, this modular approach also opens the door to introducing innovative features of NAND peripheral circuits to enable customization of NAND flash memory. Yang Shining, CEO of Changjiang Storage, said: 'Currently, the world's fastest 3D NAND I The target value of /O speed is 1.4Gbps, and most NAND suppliers can only supply 1.0 Gbps or lower. With XtackingTM technology, we are expected to significantly increase NAND I/O speed to 3.0Gbps, and I/O with DRAM DDR4. The speed is quite. This will be subversive for the NAND industry. '
Will enter mass production in 2019
Yangtze River Storage said it has successfully applied Xtacking technology to the development of its second-generation 3D NAND products. The product is expected to enter mass production in 2019. Through cooperation with customers, industry partners and industry standards bodies, Xtacking technology will be applied. In the areas of smartphones, personal computing, data centers and enterprise applications, and will open a new chapter in high-performance, customized NAND solutions.
Recently, Ziguang Group has revealed that China's first 32-layer 3D NAND flash memory chips with independent intellectual property rights will be mass-produced in the fourth quarter of this year. In addition, 64-layer 3D NAND flash memory chip development is also in full swing, planned to be implemented in 2019. Mass production. Then, the Xtacking technology released this time is expected to be applied in 64-layer 3D NAND flash memory chips.
The Yangtze River Storage was jointly funded by Ziguang Group and the National Integrated Circuit Industry Investment Fund Co., Ltd. in July 2016. According to the national storage base project plan, the main product of the Yangtze River storage is 3D NAND, which is expected to form a monthly capacity of 300,000 pieces by 2020. The scale of production will be 1 million pieces per month by 2030. The first phase of the plant was completed in September 2017, with no more than 10,000 pieces initially produced for the production of 32-layer 3D NAND Flash products. After the 64-story technology is mature, the second and third production plans will be drawn up according to the situation.
Zhao Weiguo, chairman of Ziguang Group and chairman of Changjiang Storage, stressed that in the next decade, Ziguang plans to invest at least 100 billion US dollars in research and development of the Yangtze River storage project, equivalent to an average annual investment of 10 billion US dollars.