Toshiba's 96-layer QLC flash memory will be mass-produced next year: 1500 P/E, M.2 to 20TB

At this flash summit, Toshiba Keynote focuses on BiCS4 Flash, which is QLC flash memory. BiCS4 is the fourth-generation BiCS 3D flash memory, which is upgraded from BiCS3's 64-layer stack to 96-layer. Time node and technical specifications, BiCS4 QLC flash memory Mass production will start from next year, the capacity of single chip can reach 1.33Tb, the module based on U.2 form can achieve 85TB, and the M.2 22110 can achieve 20TB, which is quite scary.

Toshiba also raised the P/E (programmable/erasable cycle) of BiCS4 QLC products from the theoretical 1000 times to 1500 times, which is half of the traditional TLC. I believe that as long as the price is strong, it will definitely please the consumption. By.

Of course, in terms of 'hard goods', Toshiba offered the XL-Flash, which was read by adjusting the structure of the memory cell, ie shorter bitline (bit line, vertical direction) and wordline (word line, horizontal direction). The delay is reduced to 1/10 of the current TLC. XL-Flash adopts SLC in the early stage and will extend to MLC in the later stage. From this point of view, XL-Flash and Samsung's Z series SSD are similar, and they all compete with Intel. High-end products.