According to the micro-network news, today's Yangtze River Storage officially announced its breakthrough technology - XtackingTM. It is reported that this technology will bring unprecedented I / O performance, higher storage density, and shorter product launch for 3D NAND flash memory. Cycle. At the same time, the technology can be applied to smart phones, personal computing, data centers and enterprise applications, and will open a new chapter in high-performance, customized NAND solutions.
At present, Changjiang Storage has successfully applied Xtacking TM technology to the development of its second-generation 3D NAND products, which are expected to enter mass production in 2019.
According to Changjiang Storage, XtackingTM can be used to independently process peripheral circuits responsible for data I/O and memory cell operations on a single wafer. This processing method facilitates the selection of appropriate advanced logic processes to allow NAND to obtain higher I. /O interface speed and more operational functions. The memory unit will also be processed independently on another wafer. When the two wafers are completed, the innovative XtackingTM technology can pass millions of processes in a single processing step. The core inter-connector VIA (Vertical Interconnect Accesses) connects the two to the circuit and adds only a limited cost.
In the traditional 3D NAND architecture, the peripheral circuit accounts for about 20~30% of the chip area, which reduces the storage density of the chip. As the 3D NAND technology is stacked to 128 layers or higher, the peripheral circuit may account for 50% of the total chip area. Above. XtackingTM technology places peripheral circuits on top of memory cells to achieve higher storage density than traditional 3D NAND.
XtackingTM technology leverages the independent processing advantages of memory cells and peripheral circuits to enable parallel, modular product design and manufacturing, with a three-month reduction in product development time and a 20% reduction in production cycles, dramatically reducing 3D NAND products. Time to market. In addition, this modular approach also opens the door to introducing innovative features of NAND peripheral circuits to enable customization of NAND flash memory.
Gregory Wong, founder and principal analyst of Forward Insights, a well-known market research firm in the field of flash and solid-state drives, believes that with the upgrade of 3D NAND, the performance of the same capacity SSD will be maintained or improved after the storage capacity of a single NAND chip is greatly increased. It will become more and more difficult. To drive the SSD performance to continue to improve, faster NAND I/O speed and multi-plane parallel operation will be necessary.
In addition, Dr. Yang Shining, CEO of Changjiang Storage, said that the world's fastest 3D NAND I/O speed target is 1.4Gbps, and most NAND suppliers can only supply 1.0 Gbps or lower. Using XtackingTM technology is expected Significantly increase NAND I/O speed to 3.0Gbps, which is comparable to DRAM DDR4 I/O speed. This will be subversive for the NAND industry.
It is worth mentioning that Qi Shijing, co-president of Ziguang Group, recently revealed that China's first 32-layer 3D NAND flash memory chips with independent intellectual property rights will be mass-produced in the fourth quarter of this year. Meanwhile, Shi Shijing said that at present, chip production equipment is in progress. Installation and commissioning, in the fourth quarter of this year, 32-layer 3D NAND flash memory chips will be mass-produced in the No. 1 chip production plant. In addition, 64-layer 3D NAND flash memory chip development is also in full swing, planned to achieve mass production in 2019.