MRAM has received a lot of attention in recent years. After the development of Everspin (Freescale subsidiary) (STT-MRAM, Spin Torque Transfer MRAM), Samsung, Micron, Qualcomm, Toshiba, etc. are all following. MRAM and NAND The main difference is reflected in the structural principle. The former relies on different magnetic orientations to store information (Nobel giant magnetoresistance effect), while the latter is charge storage information. The main problem of charge storage is that it needs to be written at a higher voltage. , and the reliability is gradually lost with time.
In contrast, MRAM not only greatly improves reliability/durability, but also maintains low latency in nanoseconds.
According to Anandtech, Everspin currently produces MRAM single chip at 256Mb, and will sample 1Gb (128MB) at the end of the year, based on GF's 22nm FD-SOI process.
At the same time, IBM announced that it will showcase the FlashCore series of new SSDs at the Flash Summit today, with a capacity of 19.2TB, based on 3D TLC flash (64 layers), hosted as an FPGA chip, and cached with Everspin's MRAM, 128MB in size. .
IBM said that the FPGA master with traditional DRAM can not provide better write acceleration, and the life is very low, so choose Everspin's MRAM.
This SSD uses U.2 interface, supports NVMe specification, and can take PCIe 4.0 channel.