China News Agency reporter Zhang Bin photo
It is reported that Changjiang Storage successfully developed China's first 32-layer 3D NAND flash memory chip in 2017 and won the Gold Medal of China Electronic Information Expo (CITE2018).
This chip, costing US$1 billion, was independently researched and developed by a team of 1,000 people for 2 years. It is the world's leading high-end memory chip in China's mainstream chip research and manufacturing level, achieving a breakthrough in China's memory chip 'zero'.
According to Shi Shijing, at present, chip production equipment is being installed and commissioned. In the fourth quarter of this year, 32-layer 3D flash memory chips will be mass-produced in the No. 1 chip production plant. In addition, 64-layer 3D flash memory chip development is also in full swing, plan 2019 Yearly mass production.
Yan Shijing said that China's chip technology lags behind the world, but the pace of independent research and development has not stopped. After the mass production of the two generations of chips, the gap between the United States, Japan, South Korea and other countries will be shortened.
It is reported that the Yangtze River Storage is jointly invested by the Ziguang Group United Nations Integrated Circuit Industry Investment Fund, Hubei Integrated Circuit Industry Investment Fund, Hubei Science and Technology Investment Group, and is responsible for the National Storage Base Project.
According to the plan, by 2023, the base capacity will reach 300,000 pieces per month, and form upstream and downstream clusters for design, testing, packaging, manufacturing, and application.