SiC application market takes off | Infineon actively layout

In response to the energy-saving and carbon-reduction trend, silicon carbide has a higher switching speed, lower switching loss and other characteristics, enabling small-volume, high-power targets, thus leaping into the power supply design star; its application market is also accelerating take-off, the future In the year, it will expand into more application areas, and power chip makers will also speed up the layout. For example, Infineon will continue to expand its CoolSiC MOSFET product line, targeting solar power generation, electric vehicle charging systems and power supply. .

Ma Guowei, Director of Applications and Systems, Greater China, Infineon Industrial Power Control Division, points out that SiC devices are more energy efficient than Si power semiconductors; and because of the reduced size of passive components, they provide higher system densities. In addition, SiC will be more widely used in various applications in the next few years, such as optoelectronics, robotics, industrial power supply, traction equipment and variable speed motors. Infineon will continue to introduce CoolSiC with Tr trench technology. The MOSFET family offers high performance, high reliability, and high power density and cost effective solutions.

Ma Guowei further explained that the conventional MOSFETs are mostly designed in a planar manner. In this way, in the on state, it is necessary to choose between the performance and the reliability of the gate oxide layer. However, after using the trench technology, the gate is not violated. Under the condition of oxide reliability, it is easier to achieve high performance requirements. In other words, using trench technology, it can achieve better gate oxide reliability and achieve switching efficiency that silicon (Si) material switching components cannot achieve. , thereby reducing the overall system volume and increasing power density.

It is reported that in order to lay out the SiC application market, Infineon has released the CoolSiC module 'EASY 1B' in 2017, and launched a series of CoolSiC products at the 2018 Germany DCM Power Electronics and Components Exhibition (PCIM Europe), including half. Bridge topology CoolSiC module 'EASY 2B', and CoolSiC module with 62mm half-bridge technology.

The EASY 1B on-resistance published in 2017 is only 45mΩ, suitable for motor drive, solar or welding technology; and the new EASY 2B module, each switch has an on-resistance of 8mΩ, suitable for over 50kW and fast switching operation Applications include solar inverters, fast charging systems or uninterruptible power system solutions. As for the 62mm half-bridge technology module, it has higher power, and its on-resistance is only 6mΩ per switch, which helps to achieve medium power. The low-inductance connection of the grading system can play a role in a variety of different applications, including medical technology or auxiliary power supply for railways.

Ma Guowei revealed that the current company's CoolSiC MOSFET will be dominated by 1200V products, because in the industrial application market, 1200V is the most common voltage; of course, the company will continue to introduce related solutions, according to different application needs to develop 1200V Above / below, smaller size, lower on-resistance products.