Huang Chunlai believes that the technical advantages of polycrystalline ingot silicon wafer products are high productivity, low light decay and low package loss; Cz single crystal products have high conversion efficiency and low dislocation density, which can be produced by ingot casting process. The monocrystalline silicon wafer combines the technical advantages of both. The downstream customers use feedback. After superimposing the PERC technology, the efficiency difference between the ingot single crystal and the Cz single crystal is only 0.18%, and the cost is greatly reduced.
'The low light decay of ingot single crystal products stems from the ingot process characteristics and gallium-doping technology', Huang Chunlai said, the data shows that the oxygen content of conventional boron-doped ingot monocrystalline silicon wafers is only Cz monocrystalline silicon wafers. 40%, can significantly reduce the photoinduced attenuation caused by boron-oxygen compounding; on the other hand, the ingot single crystal can reduce the generation of boron-oxygen complex from the source by replacing the boron element with a gallium element, the light decay ratio Cz single crystal The product is 0.5% lower and the long-term power generation is higher.
Huang Chunlai said that ingot monocrystalline silicon wafers can be better compatible with downstream end products. The platform technology can freely stack half-chip, stacked tile, double-glass double-sided battery and component technology, because there is no missing corner, half-chip component ratio The Cz single crystal component is more beautiful; when the shingle component is not allowed to be manufactured, the silicon area is 100%, which is 2% larger than the Cz single crystal area. The high efficiency ingot single crystal component (60 pieces) can be packaged to 310 watts.
Based on the Cz single crystal module, Huang Chunlai measured the electricity cost of the ingot monocrystalline module. The data shows that under the same power output condition, the price of the ingot monocrystalline component is 0.06 yuan/watt lower than that of the Cz single crystal. The electricity cost is 0.006 yuan / kWh.
Huang Chunlai introduced that GCL-Poly began researching ingot single crystal technology in 2011 and has released the third generation of products. At present, GCL-Poly ingot thermal field process, ingot inspection equipment, product quality upgrade, symmetrical thermal field, The segmented heating control effectively reduces dislocations and realizes high-quality whole-single single crystals. After the diamond-cut silicon wafer is cut, the ingot monocrystalline silicon wafer will become a differentiated product that has a significant impact on the market.