The NAND flash memory and DRAM memory used by domestic manufacturers are all imported. Last year, the import of memory chips was as high as 89.6 billion US dollars. At present, three memory chip basebands have been deployed in China. The Yangtze River storage of Ziguang is currently focusing on 3D NAND flash memory development and production. .
At the FMS International Flash Conference in August this year, Yangtze River Storage will also participate for the first time. CEO Yang Shining will showcase the new 3D NAND flash memory structure Xtacking, claiming that the I/O interface speed reaches the level of DDR4 memory and has industry-leading storage density.
According to the announcement issued by the Yangtze River Storage, he The Xtacking 3D NAND flash memory developed by us will have an unprecedented I/O speed, which will improve the performance of UFS, SSD hard drives and enterprise SSD products to an unprecedented degree.
In addition to high speed, the Xtacking stack also enables parallel processing of NAND and peripheral circuits. This modularization of flash development and manufacturing processes will shorten the time-to-market for next-generation 3D NAND flash and provide possibilities for customizing NAND flash products.
At present, the specific information of Xstacking flash memory has not been announced, and everything will have to be confirmed by Yang Shining's keynote speech at the August 7th FMS conference.
However, the I/O interface mentioned by Changjiang Storage refers to the interface of NAND flash memory. Currently, the mainstream interfaces used by NAND flash memory are Toggle, ONFi, the latest Toggle 3.0 interface speed can reach 800 MT/s, and ONFi 4.0 can reach 800MT/s. However, these two interface standards have been rarely mentioned on Samsung, Micron, and Intel's 3D NAND flash memory.
The Yangtze River storage said that Xtacking can reach the speed of DDR4 memory refers to the I / O interface, but the initial frequency of DDR4 is 2133MT / s, this speed is indeed much faster than ONFi, Toggle interface, but now these are still Guess, specifically waiting for the Yangtze River to store publicly.
XTacking flash memory should be a new technology for Changjiang storage pre-research, and is still applying for patents. Accumulating technology for companies entering the NAND market is a difficult but has to do, and the current and future mass production of 3D NAND flash memory of Changjiang Storage does not seem so advanced. The 32G stack of 64Gb cores was previously publicly displayed. Flash memory, previously received NAND orders for 10,000 wafers, but mainly used to make 8GB memory cards, not high-end.
However, there are also reports that when the 2019 Changjiang storage is actually mass-produced, the 3D NAND flash memory produced will be a 64-layer stack, so that the technical level will be shortened to 2-3 years with Samsung, Micron, Toshiba and other companies.
