According to the official website of Changjiang Storage, the new 3D NAND architecture Xtacking will be announced for the first time in the US in August. It is said that this technology can raise the NAND transmission rate to the level of DRAM DDR4 and make the storage density reach the industry leading level. , to achieve a epoch-making leap forward in the flash memory industry.
According to Changjiang Storage, Xtacking technology will bring NAND flash memory unprecedented ultra-high transfer rate, which will bring the performance of NAND flash applications such as UFS, consumer and enterprise SSD to a new level. In customers, industry partners and With the help of standards bodies, Xtacking will open a new chapter for high-performance smartphones, personal computing, data centers and enterprise applications.
Xtacking technology enables parallel processing of NAND matrices and peripheral circuits. This modular flash development and manufacturing process will significantly reduce the time-to-market of next-generation 3D NAND flash memories and enable customization of NAND flash memory products.
The company said that Yangtze River Storage CEO Dr. Yang Shining will announce Xtacking technology for the first time at the Flash Summit (FMS) in the US in August. However, it is not revealed when the technology will be put into production.
Changjiang Storage has successfully developed the first 3D NAND flash memory chip in mainland China in 2017, and strives to become a world-class 3D NAND flash memory product supplier with innovative strength.
On May 19 this year, Jiwei.com reported that the first lithography machine stored in the Yangtze River had arrived at Wuhan Tianhe Airport. After the relevant customs, commodity inspection and border checkpoint procedures were completed, it could be transported to the Yangtze River storage. Factory. According to the exclusive news of micro-network, this lithography machine is ASML's 193nm immersion lithography machine, priced at 72 million US dollars, used in 14nm ~ 20nm process. This also reveals the Yangtze River storage 3D NAND flash memory chip from the side Process process. This is the first lithography machine stored in the Yangtze River, and there will be more arrivals in succession.
At the same time, Zhao Weiguo, Chairman of Ziguang Group and Chairman of Changjiang Storage, stressed that on the basis of a major breakthrough in the independent production and development of 32-layer 3D NAND flash memory chips in September last year, we have realized the chip 20 days ahead of schedule. The production machine will move in. In the next ten years, Ziguang plans to invest at least 100 billion US dollars, equivalent to an average annual investment of 10 billion US dollars.
Gao Qiquan, executive vice president of Ziguang Group and chairman of Changjiang Storage Executive, revealed that the 3D NAND flash memory of Changjiang Storage has received the first order, a total of 10,776 chips, which will be used for 8GB USD memory card products.
At the end of this year, the base will realize small-scale mass production of domestic 3D flash memory. It will take a long time to see smart phones based on domestic flash memory and SSD solid state drives. Next year, Yangtze River Storage will also start 64-layer stacked flash memory with a single capacity of 128Gb. (16 GB).