recently, Samsung Electronics announced that it has officially started mass production of the world's first second-generation 10nm LPDDR4X DRAM chip.
Samsung claims to be compared with the LPDDR4X chip currently widely used in the current flagship mobile phone. The second generation has reduced power consumption by 10% and still has a data transfer rate of up to 4266 Mb/s.
This is Samsung's once again enriching its own 10nm DRAM product line after Samsung began mass production of the industry's first 10nm 8Gb DDR4 DRAM chip for servers in November last year.
With the mass production of this chip, Samsung also introduced a new 8GB LPDDR4X DRAM solution The new solution includes four such 10nm 16Gb LPDDR4X DRAM chips (16Gb=2GB), and the resulting 4-channel DRAM has a data transfer rate of up to 34.1GB/s, and Thickness can be reduced by more than 20% compared to previous generation products, allowing OEMs to build more powerful and thinner mobile devices. Of course, Samsung will provide 4GB, 6GB derivative versions.
With the launch of this chip, Samsung's new DRAM production line in Pyeongtaek, South Korea has also officially launched to ensure its own production capacity and meet industry demand.
'10nm DRAM chips can further enhance the performance of the next-generation flagship mobile devices that will be released from the end of this year to early 2019,' said Sewon Chun, senior vice president of Samsung Electronics Storage Sales and Marketing, 'We will continue to expand our high-end DRAM product line. To guide the 'high performance, high capacity and low power' storage market, and to meet market demand and strengthen business competitiveness.'
