Single-walled carbon nanotubes have excellent mechanical, electrical and optical properties and can be used as transparent electrode materials or semiconductor channel materials in the field of flexible and transparent electronic devices, and are therefore considered to be one of the most competitive candidate materials. High-efficiency, macro-preparation of high-quality carbon nanotube film has become a key problem in the practical application of the material. First, the size of the single-walled carbon nanotube film prepared so far is usually on the order of centimeters, and the batch preparation method cannot meet the scale. Application requirements. Secondly, due to the introduction of impurities and structural defects in the preparation process of carbon nanotube film, the photoelectric performance of the film deteriorates, which is far lower than the theoretical prediction value. Therefore, the development of an efficient, macro-prepared high quality The preparation method of single-walled carbon nanotube film has important value.
Recently, Sun Dongming team of the Advanced Carbon Materials Research Department of the Institute of Metal Research, Chinese Academy of Sciences and Liu Chang team have proposed a technology for continuous synthesis, deposition and transfer of single-walled carbon nanotube films, achieving high-quality single-wall carbon nanometers of meter size. Continuous preparation of tube films, and based on this, to build high-performance all-carbon thin-film transistor (TFT) and integrated circuit (IC) devices. Researchers use floating catalyst chemical vapor deposition method to continuously grow single-wall carbon nano-particles in the high temperature region of the reactor. The tube is then collected by a gas phase filtration and transfer system at room temperature, and transferred to a flexible PET substrate by a roll-to-roll transfer method to obtain a single-walled carbon nanotube film having a length of more than 2 m. The fluid simulation was carried out during the deposition process. The results show that the airflow in the filtration system exhibits a uniform airflow velocity distribution when the outlet velocity is adjusted so that the filtration process is in equilibrium (Fig. 1). Single-wall carbon nanoparticle prepared by this method. The tube film exhibits excellent photoelectric properties and uniformity of distribution, and its light transmittance is 90% at a wavelength of 550 nm, and the sheet resistance is 6 5Ω/□ (Fig. 2). The researchers used the prepared carbon nanotube film to construct a high-performance all-carbon flexible transparent transistor (Fig. 3) and a flexible full-carbon integrated circuit such as an XOR gate, a 101-order ring oscillator (Fig. 4). ) .
This is the first time that researchers have developed a continuous growth, deposition and transfer technique for rice-length single-walled carbon nanotube films. The prepared single-walled carbon nanotube films and their transistors have excellent photoelectric properties, and are developed for future use based on single walls. The large-area, flexible and transparent electronic devices of carbon nanotube films have laid the material foundation. The work has been approved by the National Natural Science Foundation of China, the National Key Research and Development Program, the China Postdoctoral Science Foundation, the Chinese Academy of Sciences Equipment Development Program, the Liaoning Talent Program, Youth Support for thousands of people, etc. The continuous preparation technology of single-walled carbon nanotube film has obtained the Chinese invention patent (ZL201410486883.1), and the related paper was published online in Advanced Materials recently.
Fig.1 Preparation of rice single-walled carbon nanotube film. (a) Schematic diagram of continuous synthesis, deposition and transfer of carbon nanotubes. (b) Experimental setup. (c) Single-walled carbon nanotube film on flexible PET substrate (d) A roll of single-walled carbon nanotube film. (e) Simulation curve of gas velocity. (f) Simulation results of airflow distribution in equilibrium.
Fig. 2 Photoelectric performance characterization of single-walled carbon nanotube film. (a) Characterization of light transmittance surface distribution. (b) Characterization of sheet resistance surface distribution. (c) Comparison of film properties.
Figure 3. Large-area flexible all-carbon device. (a) Photograph of flexible transparent all-carbon device. (b) Optical transmittance curve of the device. (c) Schematic diagram of full-carbon TFT structure.
Figure 4. Full carbon logic gate and ring oscillator. (a) XOR gate. (b) XOR gate optical photo. (c) XOR gate input and output characteristic curve. (d) Optical picture of the 101st ring oscillator. e) 101-order ring oscillator input and output curve.
