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Samsung today announced the production of a new generation of 8Gb LPDDR5 memory granules, plus the previous 16Gb GDDR6, 16Gb DDR5 memory granules, Samsung has completed the layout of the new generation memory standard, and is currently accelerating mass production.
Compared with Samsung, Micron, and SK Hynix, domestic companies still have 0 in DRAM memory chip production, and are still in the research and development stage. Although Ziguang’s Xi’an Ziguang Guoxin has DDR3 and DDR4 memory grain production, the technology source is still bankrupt. Qimonda.
Now another domestic company started to produce memory chips. Hefei Changxin has already put into production 8Gb LPDDR4 chips.
In 2017, China imported 89.6 billion US dollars of memory chips, almost 100% rely on imports, so the memory chip is also the domestic priority development of the semiconductor industry.
There are currently three major storage chip bases in China. Ziguang's Yangtze River storage is based in Wuhan. It mainly produces 3D NAND flash memory. It is expected to officially launch 32-layer stack of 64Gb flash memory next year. There are two camps that focus on DRAM memory chips. Fujian Jinhua The group united with UMC to build a DRAM fab in Jinjiang. Previously, a patent dispute with Micron caused the Micron chip to be banned by the Fuzhou court. It was related to UMC and Jinjiang Investment Group.
Another DRAM base is Hefei Changxin. The project originally reported that it was cooperating with the company established by the former chairman of Japan's Elpida, but the latter is almost fading. Hefei Changxin's current partner is Zhaoyi Innovation, last October. Easy Innovation announced that it has invested RMB 18 billion to enter the DRAM market. It cooperates with Hefei Industrial Investment Holdings Co., Ltd. with the goal of developing DRAM memory of 19nm process. It is expected to be successfully developed before December 31, 2018, that is, to achieve product yield (testing electrical property). Good chip to the entire wafer ratio) not less than 10%.
Hefei Changxin's DRAM project investment exceeds 7.2 billion US dollars (49.5 billion yuan), the third phase of the project construction, the current construction of the first phase of the 12-inch wafer fab, after the completion of the monthly production capacity of 125,000 wafers, Anhui Business Daily This indicates that this capacity will account for 8% of the global DRAM memory capacity.
According to the news from the semiconductor industry, Hefei Zhaoxin has officially released the film, and the specification is 8Gb LPDDR4, which is a milestone in the domestic DRAM industry.
In addition, He Ning Zhaoxin CEO Wang Ningguo said in April this year that he attended the 'National Integrated Circuit Major Special Project into Anhui Activities' held in Hefei, and said that the plant of Hefei Changxin Plant was completed in January 2018, and the equipment was also installed. .
According to the plan, Changxin will launch 8Gb DDR4 engineering samples by the end of 2018, and 8Gb LPDDR4 will be launched in the third quarter of 2019. By the end of 2019, the production capacity will reach 20,000 pieces a month. From 2020, the company will start planning the second plant, and in 2021 Complete 17nn research and development.
From the time of this production, the memory development and production of Zhaoyi Innovation/Hefei Changxin are being carried out step by step. The launch of 8Gb LPDDR4 is only a planned progress, but from a technical breakthrough This should be the first time that a domestic company has put into production LPDDR4 memory. Previously, Ziguang Guoxin plans to provide only DDR4 particles.
But then again, whether it is DDR4 or LPDDR 4 granules, domestic companies are gratifying for their production, but there is still a long way to go before they go from trial production to large-scale listing to competitiveness. 20,000 wafers per month, even if the international mainstream is the technology gap of LPDDR4 next year, the capacity of 20,000 wafers per month will not be significant for the capacity of millions of wafers per month globally. influences.
