On the morning of July 17, Samsung announced this morning, Successfully developed the industry's first LPDDR5-6400 memory chip based on 10nm (10~20nm) process.
It is reported that, The LPDDR5 memory chip has a single capacity of 8Gb (1GB) The module prototype of 8GB capacity also made and completed functional verification.
Other basic specifications are, Memory speed (pin width) up to 6400Mbps It is 1.5 times that of LPDDR4X 4266Mbps. Samsung claims that it can transmit 51.2GB of data per second (such as the 64bit bus common to high-end mobile phones), which is equivalent to 14 1080P movies (3.7GB per unit). If the PC's 128bit BUS is broken every second. 100GB without pressure.
at the same time, Power consumption is up to 30% lower than LPDDR4X Mainly due to the dynamic adjustment of the voltage, to avoid invalid consumption, deep sleep and other technologies to join.
Samsung's 8Gb LPDDR5 specification has high flexibility, up to 6400Mbps at 1.1V working voltage and 5500Mbps at 1.05V. It is available for mobile phones and car platforms.
According to the data, Samsung first successfully mass-produced 8Gb LPDDR4 memory chips in 2014, and then began to promote the transition to the new LPDDR5 standard.
The new 8Gb LPDDR5 memory chip is part of Samsung's high-end DRAM product line, which already includes 10nm 16Gb GDDR6 memory chips (production in December 2017) and 16Gb DDR5 memory chips (developed in February this year).
LPDDR5 memory chips will be used in mobile devices such as mobile phones, tablets, 2-in-1 computers, etc. Samsung claims that 5G and AI will be the main service scenes.
Samsung will mass produce LPDDR5, GDDR6 and DDR5 DRAM chips at its plant in Pyeongtaek, South Korea.
