iMobile mobile home, July 11th news, Samsung, the flash memory giant officially announced that it has begun mass production of the fifth generation of flash memory particles - V-NAND, the fifth generation of flash memory will use the Toggle DDR4.0 interface for the first time, and The transfer speed between memory and flash memory can reach up to 1.4Gbps, which is 40% higher than the previous generation.
Similar to the previous products, the fifth-generation V-NAND flash memory also uses the CTF (charge trap flash) process, but the stacking layer has been increased from 64 layers of the previous generation to more than 90 layers. The energy efficiency of the new products will be better, work. The voltage is reduced from 1.8V to 1.2V.
At the same time, the read and write performance of the fifth-generation V-NAND has been enhanced, the write speed is increased by about 30% compared to the previous generation, reaching 500μs (single page write time), and the read speed is also improved, single page read Take time is reduced to 50μs.
It is foreseeable that the upgrade of Samsung's flash granules will bring better performance to the devices that will be adopted later, including the new generation of flagship smartphone products that we are looking forward to.
iMobile mobile home, July 11th news, Samsung, the flash memory giant officially announced that it has begun mass production of the fifth generation of flash memory particles - V-NAND, the fifth generation of flash memory will use the Toggle DDR4.0 interface for the first time, and The transfer speed between memory and flash memory can reach up to 1.4Gbps, which is 40% higher than the previous generation.
Similar to the previous products, the fifth-generation V-NAND flash memory also uses the CTF (charge trap flash) process, but the stacking layer has been increased from 64 layers of the previous generation to more than 90 layers. The energy efficiency of the new products will be better, work. The voltage is reduced from 1.8V to 1.2V.
At the same time, the read and write performance of the fifth-generation V-NAND has been enhanced, the write speed is increased by about 30% compared to the previous generation, reaching 500μs (single page write time), and the read speed is also improved, single page read Take time is reduced to 50μs.
It is foreseeable that the upgrade of Samsung's flash granules will bring better performance to the devices that will be adopted later, including the new generation of flagship smartphone products that we are looking forward to.
