Because the Internet of Things has significantly increased the number of endpoints that capture a certain amount of data (about 2 billion devices shipped in 2017, a 54% increase from 2015), it requires a lot of memory to process and store data. To do this, a large server is being built. Clusters, these clusters will consume a lot of power. Power conversion will generate heat, which will eventually be depleted. This heat is so large that cooling costs are one of the main costs of running a server cluster. This has led PSU manufacturers to constantly seek Building a more energy efficient PSU. In addition, in order to reduce cooling costs with better energy efficiency, it is necessary to reduce the size of the PSU so that more servers can be installed in the same space.
There are many ways to transfer this data, but the next generation of wireless interconnect 5G is deployed in 2019. Once the 5G technology is fully utilized, it will be able to provide 10 times faster than the current 4G LTE network. This speed increase requires more High power, which will increase the number of power MOSFETs in each 5G radio by about 5 times.
To this end, ON Semiconductor offers high-performance discrete solutions to successfully achieve the energy-efficient goals of the cloud power market. Compared to the previous generation of super-junction devices, the new energy-efficient discrete 650 V SuperFET III MOSFET series enables cloud power supplies to achieve this. High energy efficiency. SuperFETIII technology is available in three different versions: Easy Drive, Fast Recovery (FRFET) and Fast (FAST). Applications and topologies will determine which version should be used for optimal energy efficiency. .
For the secondary side, ON Semiconductor offers a full range of low voltage MOSFETs that are optimized for cloud power supplies. T6 technology offers the industry's lowest RDSon for 30V, 40V and 60V. The new T8 technology is 25V, 40V, 60V And 80V provides the same ultra-low RDSon as T6, while further improving the switching parameters. For 80 V, 100 V and 120 V, using PTNG technology, providing excellent RDSon and body diode performance. As manufacturers challenge higher energy efficiency and Strong, they developed devices like ON Semiconductor's 650 and 1200 V silicon carbide (SiC) diodes for power factor correction (PFC).
With the dramatic increase in cloud-based IoT, it is important that the cloud is powered by the most energy efficient power supplies. ON Semiconductor is doing its best to provide leading-edge MOSFETs from 25V to 650V and to develop next-generation semiconductor SiC.