Xidian Hao Yue academician team made new breakthroughs in the field of microelectronics

In the first half of 2018, the Institute of Microelectronics, Key Laboratory of Wideband Gap Semiconductor Technology, Academician Hao Yue, made a series of significant progress in the field of high-performance microelectronic devices research, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, etc. 28 high-quality academic papers published in important journals.

The Academician Hao Yue team has been committed to the wide band gap/ultra-wide bandgap semiconductor materials and devices in the frontier of microelectronics. The basic research and technology research and development of new devices in the post-Moore era has made continuous breakthroughs. In the first half of this year, it is highly efficient and high. Linear nitride semiconductor high electron mobility transistor (HEMT), ultra-wide bandgap semiconductor materials and devices, non-silicon channel field effect transistors, ferroelectric gated negative capacitance field effect transistors and other new devices, as well as perovskite materials and A number of significant advances and landmark achievements have been made in the device.

Journal Title

Published papers

IEEE Electron Device Letters

11

IEEE Transactions on Electron Devices

6

IEEE Journal of the Electron Devices Society

2

IEEE Photonics Journal

5

IEEE Transactions on Device and Materials Reliability

1

IEEE Journal of Lightwave Technology

1

IEEE Photonics Technology Letters

1

IEEE Journal of Quantum Electronics

1

Academician Hao Yue published academic paper statistics in IEEE journals in the first half of 2018

Group photo of Academician Hao Yue

Wide bandgap semiconductor device performance breakthrough

The wide bandgap semiconductor represented by nitride is the most important new field of microelectronic technology after silicon and gallium arsenide. Nitride semiconductors in wireless communication microwave devices, power conversion power switching devices, new LED lighting and display devices, etc. The field has important applications. The team of Academician Hao Yue has been engaged in the research of nitride semiconductor materials and devices since 1997. He has made breakthroughs in the development of high-quality materials and high-performance devices, which has significantly improved the key materials and devices of the third-generation semiconductors in China. The level is of great significance to promote the transformation and upgrading of the electronics industry and foster new economic growth points.

In the first half of 2018, in the field of high-performance nitride HEMT devices, Dr. Xiao Ming reported the AlGaN channel HEMT device based on the graded buffer layer, achieving the highest level of saturated output current of the AlGaN channel device in the world. Dr. Lu Yang passed The graphical ohmic contact technology proposed by the team achieved an extremely low ohmic contact resistance of 0.12 Ω·mm. Compared with the prior art, the ohmic contact resistance was reduced by 70%. Dr. Xiao Ming realized the switch by low-power surface oxidation treatment technology. High-performance enhanced AlN/GaN HEMT device with a leakage current as low as 2.6×10-7A/mm and an output current of 1.36A/mm. Dr. Hou Bin achieved 0.9A/mm by charge trapping technology, threshold Flash-like high-performance enhanced Al2O3/AlGaN/GaN MIS-HEMTs with a voltage of 2.6V. Master of Tension has reported the first p-GaN bridge-enhanced AlGaN trench gate implant transistor for the first time in the world by optimizing source contact. The p-GaN bridge structure enables adjustable threshold voltages in the 4 to 7V range. The results are published in IEEE Electron Device Letters.

New AlGaN channel enhanced device related results reported by the Master of Tension

The results of the new low-ohmic contact resistance technology reported by Dr. Lu Yang, the research progress of new device technology in the Moore era, the new device technology in the post-Moore era is a new research direction that the Academician Hao Yue has pushed in recent years. With the CMOS technology node proportional Scaling is gradually coming to an end, and adopting a new device structure has become an inevitable choice to continue Moore's Law. Therefore, new devices in the post-Moore era will influence and determine the future development of microelectronic device technology and the integrated circuit industry. With the development of integrated circuit technology At the nanoscale, existing semiconductor devices will suffer from short-channel effects, high leakage currents, and subthreshold swings of 60mV/dec. Tunneling field effect transistors (TFETs) and high mobility based on ferroelectric materials锗New device technologies such as base-channel negative-capacitance MOSFET devices are expected to solve these problems. Dr. Zhou Jiu-wen has published four academic papers on IEEE Electron Device Letters, systematically verifying the negative-capacitance effect and negative-capacitance pair devices in ferroelectric MOSFET devices. The effect of current and subthreshold swing, the dielectric layer characteristics of the device are studied in detail The influence of sex. Dr. Xiaoling Xiao proposed a high-performance gate-modulated InGaN undoped TFET (DL-TFET) device, and performed device characteristics in terms of bipolar characteristics, off-state current, switching ratio, and subthreshold swing. Systematic theoretical analysis. In addition, Academician Hao Yue has published several high-level academic papers in the fields of photodetectors, new two-dimensional materials and devices.

Production process and structure of negative capacitance transistor reported by Dr. Zhou Jiuren

According to the team's goal of “First and/or Best” determined by Academician Hao Yue, facing the international microelectronics academic frontier and the main battlefield of microelectronics core technology, the team follows the 'big project, big The development route of the team, the big platform, and the big achievements'. After more than 20 years of hard work, China has played an important role in the field of many new microelectronics devices, which has also made our school have an important influence in the field of international microelectronics.