For customers who need to significantly reduce power consumption and chip size, the 22FDX offers the industry's lower operating voltage compared to the traditional CMOS bulk silicon process, which can achieve frequencies up to 500MHz with only 0.4V. Efficiently integrate RF, transceiver, baseband, processor and power management components on a single chip. For devices that require long battery life, greater processing power and connectivity, this technology can be low power, high density The logic IC helps the device achieve high performance RF and millimeter wave functionality.
Recent VLSI research results show that FD-SOI technology has received great attention in the industry. The core roadmap strategy fits the industry's development trend. As a complementary technology to FinFET, FD-SOI has been designed for specific applications. Areas, such as the Internet of Things where power consumption is critical and product life is relatively short.
Gexin is committed to promoting the transformation of 22FDX technology and is preparing to introduce a new generation of 12FDXTM technology. This technology will give full-node expansion to next-generation applications such as edge node artificial intelligence, AR/VR to 5G networks and advanced driver assistance (ADAS). Advantages and higher efficiency. 22FDX is in the early mass production stage, its yield and performance are fully in line with customer expectations.