Samsung Electronics announced that it has begun mass production of the fifth-generation V-NAND 3D stacked flash memory, with both large capacity and ultra-high speed.
Samsung's fifth-generation V-NAND uses a 96-layer stack design, which is the current industry record. It integrates more than 85 billion 3D TLC CTF flash memory cells, each of which can store 3 bits of data, and the single Die capacity is 256Gb (32GB).
These units are stacked in a pyramidal structure with tiny vertical channel holes running between each layer, measuring only a few hundred microns wide.
It also used the Toggle DDR 4.0 interface for the first time in the industry. The data transfer rate between storage and memory is as high as 1.4Gbps, which is 40% higher than the previous 64-layer stack. At the same time, the voltage is reduced from 1.8V to 1.2V, and the energy efficiency is greatly improved.
Data write latency is only 500 microseconds , 30% higher than the previous generation, and the response time of the read signal is also greatly reduced to 50 microseconds.
Samsung also revealed that QLC V-NAND flash granules of 1Tb (128GB) capacity are being developed.
