Littelfuse Silicon Carbide (SiC) Schottky Diodes Reduce Energy Cost and Space Requirements

Littelfuse today announced the launch of five new GEN2 series 1200 V 3L TO-247 Schottky diodes and three GEN2 series 1200 V 2L TO-263 Schottky diodes to expand its silicon carbide power semiconductor portfolio. Compared to silicon diodes, GEN2 silicon carbide Schottky diodes significantly reduce switching losses and significantly increase the efficiency and reliability of power electronics systems. This product was released during the PCIM 2018 Europe show in Nuremberg.

GEN2 Series 1200 V, 3L TO-247 and 2L TO-263 Schottky Diodes

The high efficiency of silicon carbide technology offers multiple advantages for designers of electric vehicle chargers, data center power supplies and renewable energy systems. Because GEN2 silicon carbide Schottky diodes dissipate less energy than many other solutions, and It can operate at higher junction temperatures, so the required heat sink and system take up less space. End users will benefit from a more compact, more energy efficient system and possibly lower total cost of ownership.

Typical applications for the GEN2 1200V Schottky diode family include:

 Power Factor Correction (PFC)

 Buck-Boost Phase of DC-DC Converter

 Freewheeling diodes for inverter stages (switch mode power supplies, solar, UPS, industrial drives)

 High frequency output rectification

 Electric vehicle (EV) charging station

3L TO-247 GEN2 Silicon Carbide Schottky Diodes are available in 10 A, 15 A, 20 A, 30 A and 40 A rated currents. 2L TO-263 GEN2 Silicon Carbide Schottky Diodes are available in 10 A, 15 A and 20 A rated current. All products have negligible reverse recovery current, can adapt to high inrush current without thermal runaway, and can work at junction temperature up to 175 °C. Compared to ordinary Silicon bipolar power diodes, these products are ideal for applications that require increased efficiency and reliability and simplify thermal management.