On June 5, in the production building of the Second Research Institute of China Electronics Technology Group Corporation, 100 sets of silicon carbide (SiC) single crystal growth equipment are operating at high speed, and SiC single crystals are 'strively' growing in these 100 equipments.
Li Bin, director of the first division of China Electronics Division II, said: 'The 100 SiC single crystal growth equipment and powder materials are all independently developed and produced by us. We are very proud, we can produce them ourselves.'
SiC single crystal is a third-generation semiconductor material. It has high puncture band width, high critical breakdown field strength, high electron mobility and high thermal conductivity. It is used to make high temperature, high frequency, high power and anti-irradiation. The ideal material for short-wave illumination and optoelectronic integrated devices is the core material for important fields such as next-generation radar, satellite communication, high-voltage transmission and transformation, rail transit, electric vehicles, and communication base stations. It has important application value and broad application prospects.
Li Bin, director of the first division of China Electronics Second Division, said: 'High-purity SiC powder is the key raw material for the growth of SiC single crystal. The single crystal growth furnace is the core equipment for the growth of SiC single crystal. To grow high-quality SiC single Crystal, in the case of high purity SiC powder and single crystal growth furnace, it is also necessary to design, debug and optimize the production process.
According to reports, single crystal growth furnaces need to meet the requirements of high temperature, high vacuum and high cleanliness. At present, only two of them can produce single crystal growth furnaces. China Electric Science II is one of them. They broke through the growth of large diameter SiC. The temperature field design can be used for high ultimate vacuum of 150mm diameter SiC single crystal growth furnace, low background leakage rate growth furnace design and manufacturing and small batch production; they also break through the impurity control technology and particle size control technology in high purity SiC powder. Key technologies such as crystal control technology have realized the mass production of SiC powder with a purity of more than 99.9995%.
