The world's advanced to create the world's first 8-inch GaN foundry

From the silicon wafer to the 8-inch wafer foundry offer, the world's advanced 8-inch capacity supply and demand is booming until the end of the year, and actively expand the GaN production capacity, the international IDM factory is optimistic about the electric vehicle industry, the pre-package Under the world's advanced GaN production capacity, GaN output will be rapidly increased in the next year, becoming the world's first 8-inch GaN foundry.

Semiconductor upstream materials prices are rising, 8-inch OEM demand is tight

From the beginning of the year to the semiconductor upstream material silicon wafers all the way to increase prices, reflecting the downstream 8-inch wafer foundry demand is tight, the world's advanced in the last year has felt from fingerprint recognition, MOSFET and other customers increased orders, the first half of this year benefited from the power supply Management IC and large-inch panel driver ICs are strong. At the beginning of this year, some products were upgraded to offer, further increasing the power management IC and large-inch panel driver IC revenue to 48% and 30%.

GaN can withstand high voltage, suitable for light vehicle design

In addition, the outsourcing production orders of the international IDM makers continued to be released, focusing on high-end products such as electric vehicles and the Internet of Things. The world’s advanced 8 inch monthly production capacity is approximately 209,000 pieces, and the capacity utilization rate reaches 100%, which is obviously insufficient. In addition to expanding production capacity, foreign investors are also optimistic about the future application of advanced GaN research and development in the world. GaN has high voltage resistance, high temperature resistance and is suitable for high frequency operation, and can achieve the reduction of module, peripheral components and cooling system. The volume is ideal for lightweight vehicle design applications.

Gross profit margin is expected to increase

At present, the company's GaN R&D progress is progressing smoothly. In cooperation with Kyma, an equipment and materials plant, and ROI of GaN silicon substrate plant QROMIS, it has successively released 8-inch capacity for power management IC customers last year. In response to foreign demand, GaN production capacity is expected to expand next year. In the middle of the year, it is expected to produce a large amount of output. Foreign companies will pre-package the world's advanced production capacity next year. It is expected that volume production will increase the overall gross profit margin.

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