Whether or not everyone can accept it, TCL flash memory has become the absolute mainstream, and QLC flash memory is about to be popularized because it can bring higher storage density and lower manufacturing cost. This is a vendor's favorite, although its lifetime is once again greatly reduced. At present, there are only about 1000 program/erase cycles under normal conditions, and it takes an average of two or three days to write to a full disk.
Similar to TLC, the main control companies also need to design various error correcting auxiliary mechanisms for QLC flash memory to extend their lifespan. Grouplink Electronics has launched a special focus on QLC flash memory. Fourth generation data error protection mechanism Smart ECC.
Group Alliance Electronics stated that with Smart ECC, When data is written into the NAND flash memory, the master control generates a set of correction codes simultaneously with the data, and when the data is read back from the NAND flash memory, if an error occurs, the master control corrects the data with the correction code.
If the correction code cannot be recovered, the data will enter the Smart ECC remedial process. With the specially designed Smart ECC algorithm to try to correct, to further enhance the reliability of the data.
Group Electronics also announced that its subsidiary includes USB, memory cards, eMMC/UFS, SSD and other flash memory controllers, all of which have fully supported QLC flash memory.
