5G connection involves key technologies such as spectrum extension, higher order modulation, carrier aggregation, full-dimension beamforming, etc. Therefore, it is necessary to expand the technology base to support enhanced mobile broadband connection. According to spectrum usage and network occupation space, implementation of 'multi-input' Multiple output (MIMO) technology requires four (4TX) transmit antennas to 64 or more antennas. The future of 5G networks will depend on GaN and Si-LDMOS technologies, and NXP has been at the forefront of RF power amplifier development .
'NXP launched the world's first LDMOS product in 1992 and has been at the leading position for 25 years. Now, relying on the successful historical experience, NXP has consolidated its RF leadership with industry-leading GaN technology, providing cellular mobile applications Excellent linearity efficiency,” said Paul Hart, senior vice president and general manager of RF power division at NXP. “With superior supply chain, global application support, and outstanding design expertise in the industry, NXP has become a leader in 5G solutions. RF partners. '
At the IMS 2018 show, NXP launched a new RF GaN wideband power transistor, expanding its Airfast third-generation Si-LDMOS portfolio for macrocell and outdoor small base station solutions. New products include: -A3G22H400-04S: GaN products are ideally suited for 40 W base stations with efficiency up to 56.5% and a gain of 15.4 dB covering the cellular band from 1800 MHz to 2200 Mhz. -A3G35H100-04S: This GaN product offers 43.8% efficiency and 14 dB gain, available in Realize 16 TX MIMO solution at 3.5 GHz. -A3T18H400W23S: This Si-LDMOS product leads the 5G era with 1.8 GHz frequency, Doherty efficiency is 53.4%, gain is 17.1 dB. -A3T21H456W23S: This solution covers from 2.11 GHz The full 90 MHz band to 2.2 GHz demonstrates the outstanding efficiency, RF power and signal bandwidth performance of NXP Si-LDMOS products. -A3I20D040WN: In the NXP integrated ultra-wideband LDMOS product family, this solution provides 46.5 dBm Peak power, 365 MHz bandwidth, and 32 dB AB performance gain, 18% efficiency at 10 dB OBO. -A2I09VD030N: This product has 46 dBm peak power and Class AB performance gain of 3 4.5 dB, 20% efficiency at 10 dB OBO. The RF bandwidth of this product is 575 MHz to 960 MHz.
NXP offers a wide range of RF power technology products, covering GaN, Silicon-LDMOS, SiGe and GaAs, supporting 5G products covering frequency and power spectrum and multiple levels of integration. NXP offers a wide range of options to build digital computing products, It also supports baseband processing applications and is a unique supplier of end-to-end 5G solutions.