Intel 10nm Technology Secret: Transistor Density Than Samsung Semiconductor 7nm

Intel's 14nm process has been used for three consecutive generations, and it will be used again. 10nm has been postponed again because the yield cannot always be satisfied. Now it has been skipped until 2019. In the second half of the year, Intel itself is not sure.

In contrast, TSMC, Samsung has begun mass production of 7nm, GlobalFoundries 7nm not far away.

Intel's technology really does not work? Obviously not. Although all called xxnm, but by contrast, Intel is undoubtedly the most rigorous, has been pursuing the highest technical indicators, and precisely because of this, coupled with the rapid increase in the difficulty of semiconductor technology, Intel 10nm has been difficult to produce.

At present, Intel 10nm processor has been shipped in small quantities. The known product has only a low voltage and low power Core i3-8121U, which was first launched by the Lenovo IdeaPad 330 notebook.

TechInsight analyzed this processor and obtained some amazing findings directly confirming the advanced nature of Intel's new process.


Photomicrograph of i3-8121U Core

The analysis found that The Intel 10nm process uses a third-generation FinFET tessellation transistor technology. The transistor density has reached 008 million cells per square millimeter (according to the official announcement), which is 2.7 times the current 14nm!

As a comparison, Samsung's 10nm process transistors have a density of 55.1 million cells per square millimeter, which is equivalent to only half of Intel's multipoints. 7nm is 102.13 million cells per square millimeter, barely higher than Intel's 10nm.

As for TSMC, GF's 7nm, transistor density is even lower than Samsung.

In other words, As far as transistor integration is concerned, Intel 10nm is indeed on the same level as its opponent's 7nm, and even better!

In addition, Intel's 10nm minimum gate pitch (Gate Pitch) reduced from 70nm to 54nm, the minimum metal pitch (MetalPitch) reduced from 52nm to 36nm, also far better than the opponent.

In fact Compared with other existing 10nm and future 7nm, Intel 10nm has the best pitch reduction index.

Other highlights of Intel 10nm include:

- For the first time in BEOL's back-end process, metallic copper, ruthenium (Ru), is used as a precious metal.

- Self-aligned patterning scheme for the first time on BEOL backends and contact points

- 6.2-Track High-Density Library for Hyperscaling

- Cell-level COAG (Contact on active gate) technology

Of course, the technical indicators are advanced again, and eventually they must be converted into competitive products before they count.

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