On June 5th, in the production building of the Second Institute of China Electronics Technology Group Corporation, 100 silicon carbide (SiC) single crystal growth equipments are operating at high speed, and SiC single crystals are 'struggling' to grow in these 100 equipments.
Li Bin, the head of the First Division of the China Electronics Division II, said: 'The 100 SiC single crystal growth equipment and powders are our own R&D and production. We are very proud that we can produce it ourselves.'
SiC single crystal is a third generation semiconductor material. With its unique characteristics such as large band gap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, it has become a high-temperature, high-frequency, high-power, radiation-resistant material. , The ideal material for short-wave luminescence and optoelectronic integrated devices is a core material for next-generation radars, satellite communications, high-voltage power transmission, rail transit, electric vehicles, and communications base stations. It has important application value and broad application prospects.
Li Bin, the director of the First Division of China Electronics and Information Technology Co., Ltd., said: 'High-purity SiC powder is the key raw material for the growth of SiC single crystals. The single-crystal growth furnace is the core equipment for the growth of SiC single crystals. It is necessary to grow high-quality SiC sheets. Crystals, under the conditions of high purity SiC powder and single crystal growth furnace, also need to design, debug and optimize the production process.
According to reports, the single crystal growth furnace needs to meet the requirements of high temperature, high vacuum, and high cleanliness. At present, there are only two domestic single crystal growth furnaces, and China Electronics 2 is one of them. They broke through the growth of large diameter SiC. The temperature field design achieves high ultimate vacuum for 150mm diameter SiC single crystal growth furnaces, low background leakage rate growth furnace design and manufacturing, and small batch production; they also break through the impurity control technology in high purity SiC powder, particle size control technology, Crystalline control technology and other key technologies have achieved mass production of SiC powder with a purity of more than 99.9995%.
