Intel and Micron announced their advancement into QLC flash memory. From the structural principle, QLC flash memory can hold 4 bits of data per unit, which is one third more than TLC, but PE only has 1000 times, which is 1/3 of TLC.
Of course, the benefit is a significant increase in the capacity of the memory chip, that is, the same capacity compared to TLC will have a competitive price advantage.
In addition to Intel’s non-volatile DDR4 memory modules, Intel also announced more progress in QLC SSDs during today’s storage activities.
Intel revealed that In the second half of the year, QLC SSDs will be introduced to the consumer market. From the previous news, it may be called 660p, adopt M.2 board type, take PCIe x2 channels, and have a maximum capacity of 2TB..
The picture shows DC P4510
In the enterprise domain, Intel’s progress is faster. Including the 2.5-inch QLC flash SSD to achieve 20TB size It seems that this should be a 15mm thick U.2 interface NVMe product, ultimately positioned below the DC P4510, which currently offers 8TB U.2 interface products.
It is reported that all Intel's proprietary 3D flash memory production is now completed at the Fab 68 plant in Dalian. The IM (Intel/Micron) Fab2 in Utah is dedicated to the production of 3D Xpoint memory chips.
