'The silicon carbide device has extremely high withstand voltage levels and energy density, which can effectively reduce the energy conversion loss and the device's volume and weight, meet the high performance requirements of major strategic areas such as power transmission, locomotive index, new energy vehicles, modern defense and weaponry, etc. The urgent demand for high-power power electronic devices is praised as the 'green energy' device that drives the 'new energy revolution'.
The third generation semiconductor industry represented by silicon carbide (SiC) is the new commanding point of global strategic competition. SiC devices have extremely high withstand voltage levels and energy densities, which can effectively reduce the energy conversion loss and the device's volume and weight, satisfying the power transmission. The urgent demand for high-performance, high-power power electronic devices in major strategic areas such as locomotive indexes, new energy vehicles, and modern defense and armament equipment has been hailed as a 'green energy' device that has driven the 'new energy revolution'. But for a long time, China The development and production of SiC devices mainly depend on imports. The successful R&D of key equipments for SiC devices has a significant role in accelerating the resolution of the entire industry chain, reducing production line construction and operating costs, and promoting industrial technological progress and rapid growth.
Under the support of the National 863 Program, through the unremitting efforts of the research team of the 48th Institute of China Electronics Technology Group Corporation as the leader, the company successfully developed a high-temperature high-energy ion implanter for 4-6-inch SiC materials and devices. Crystal growth furnace, epitaxial growth furnace and other key equipment and achieve preliminary application. This subject has recently passed the acceptance of the Ministry of Science and Technology, and the research results have effectively guaranteed the independent and controllable development of China's SiC power electronic device industry's material-equipment-device'.
The SiC high-temperature high-energy ion implanter and SiC epitaxial growth furnace developed by the project are the key equipment for the first domestically produced SiC device, which can satisfy the highest energy of aluminum ion implantation up to 700 KeV, injection uniformity within 1%, and the maximum temperature of SiC epitaxy up to 1700°C. The growth uniformity reaches less than 3%. The above main technical indicators have reached the international level. Meanwhile, the sales price of equipment can be controlled below 2/3 of the same type of imported equipment, which effectively supports the development and production of domestic SiC devices. The verification of the manufacturing process and production data performed by more than ten companies including 13 companies, 55 institutes, and Tyco Tianrun have shown that the performance and yield of SiC devices manufactured using domestic equipment are close to the import level, and the device yield is over 90%. Based on the full completion of the project task, the research group took a close grasp of future market opportunities, and also carried out research on integration of key process equipment and processes such as large-scale SiC gate oxygen growth, high temperature activation, etching, thinning, cutting, grinding and polishing. The SiC device manufacturing lays a solid foundation for the localization of the equipment.
