In the past two years, Samsung Electronics and TSMC have been rushing in the semiconductor process. Although there is a technological dispute, it is an indisputable fact that Intel, the former leader, was left behind.
Above the Samsung Technology Forum SFF 2018 USA held in the United States, Samsung announced that it will continue to enter the 5nm, 4nm, and 3nm processes, which is equal to the physical limit!
7LPP (7nm Low Power Plus)
Samsung will be in 7LPP process The first application of EUV EUV lithography technology is expected to start in the second half of this year Key IP is under development and will be completed in the first half of next year.
5LPE (5nm Low Power Early)
Continue to innovate and improve on the basis of the 7 LPP process, Can further reduce the chip core area, bring ultra-low power consumption.
4LPE/LPP (4nm Low Power Early/Plus)
The last application of a highly sophisticated and industry-proven FinFET stereo transistor technology , Combined with the mature technology of the previous 5LPE process, the chip area is smaller and the performance is higher. It can quickly achieve high-yield volume production, and is also convenient for customers to upgrade.
3GAAE/GAAP (3nm Gate-All-Around Early/Plus)
Gate-All-Around is Surrounding gate , compared to the current FinFET Tri-Gate tri-gate design, The underlying structure of the transistor will be redesigned to overcome the physics and performance limitations of the current technology, enhance gate control, and greatly enhance performance.
Samsung’s GAA technology is called MBCFET (multi-bridge channel field effect transistor), is using nanoscale device development.
Everyone may think that Samsung's process is mainly used to produce low-power devices such as mobile processors, but in fact, in the high-performance field, Samsung also prepared a killer, large-scale data center, AI artificial intelligence, ML machine learning, 7LPP and follow-up processes are Can provide services, and has a complete set of platform solutions.
For example, high-speed 100Gbps + SerDes (serial conversion deserializer), Samsung designed 2.5D/3D Heterogeneous Packaging Technology.
For 5G, low-power microcontrollers (MCUs) in the area of vehicle networking, and next-generation networking devices, Samsung will also provide a complete turnkey platform solution, ranging from 28/18nm eMRA/RF to 10/8nm FinFET. .
