Taiwan Semiconductor Manufacturing Co., Ltd

Benefited from 5G's entry into commercial and automotive electronics, the general trend of the Internet of Things, the third generation of semiconductor materials, gallium nitride and silicon carbide (SiC), entered a rapid growth phase. International high-end IDM manufacturers have stepped into third-generation semiconductors. Material manufacturing process, TSMC, the world's advanced GaN process volume increased significantly, this year, the next two years into the harvest period.

Taiwan Semiconductor Manufacturing Co., Ltd. and the world's advanced companies have been developing GaN process technology for many years, and the technology has matured into mass production. At present, TSMC's 6-inch production capacity has opened up GaN manufacturing process to provide Deutsche Telekom's Dialog output power conversion chip; and the world’s advanced equipment and materials plant. Kyma, the company's investment in GaN silicon substrate plant QROMIS, has been working together to release 8-inch capacity for power management IC customers last year.

Dialog pointed out that the GaN production power conversion controller has high efficiency, small size, and higher power and excellent characteristics, bringing the world's fastest transistors. Topology industry research of Jibang Technology pointed out that GaN and SiC are not only resistant to high voltage In addition to the features, they also have the advantages of high temperature resistance and high frequency operation, which not only can significantly reduce the chip area, but also simplify the design of peripheral circuits.