The giants of emerging markets, patent competition is changing rapidly
The typical representatives of 3D NAND flash memory products that have come out one after another include: 3D V-NAND-32L from Samsung Electronics (Samsung Electronics) in 2015, and then SK Hynix (SK Hynix) 3D NAND V2-36L from 2016, Toshiba/SanDisk (Toshiba) / SanDisk) 3D NAND-48L and Micron/Intel 3D NAND-32L.
In the near term, the 3D non-volatile memory (NVM) field has been frequently used. For example, Western Digital has acquired SanDisk, the Chinese government has invested heavily in storage, and Intel has announced that Micron/Intel’s cooperation will separate to further develop. 3D NAND. We have confirmed the development of these industries from industrial patent applications. Chinese manufacturers (YMTC/YRST) have applied for a large number of patents related to 3D NVM in this field in the near future, and Samsung has been in China, the United States and South Korea in recent months. Both have disclosed a large number of patents, reflecting their intention to further strengthen their patent position in the field of 3D NVM. In addition, we have also noticed that NPE (Non-patent Implementing Body) organizations such as Conversant IP and WiLAN are actively entering this field. The involvement of these NPE organizations It marks the prosperity of the market. When they are ready to use their patents to make money one day, they will provoke a patent battle in the future.
In this report, KnowMade, a wholly-owned subsidiary of Yole, has conducted an in-depth analysis of global patents related to 3D NVM, detailing current patent status and potential trends in the field. SanDisk/Western Digital, Samsung and Toshiba in 3D NVM The patent layout of the field is in the leading position in the industry. These vendors have mastered 65% of the patents in this field. Western Digital and Toshiba signed the JV joint venture expansion agreement until 2029, while Samsung and Western Digital updated their copy to 2024. The year's patent cross-licensing agreement. On the other hand, we also noticed that Chinese manufacturers began to show their prominence in the field of 3D NVM patents.
Patent applications in the 3D NVM field began in the 1990s with Toshiba and SanDisk. The two parties signed a joint investment agreement on flash memory in 1999. In the late 2000s, patent applications related to the development of 3D memory architecture began to appear, mainly including BiCS (Bit Cost Scalable, SanDisk and Toshiba), TCAT (Terabit Cell Array Transistor, Samsung Electronics) and FG (Floating Gate, SK Hynix). Soon after, Micron Technology also developed the FG architecture. Macronix International developed SGVC (Single Gate) in 2015. (Vertical Channel) Architecture. Since 2008, 3D NVM-related patent applications have been growing continuously. Now there are more than 3,400 patent families in this field, totaling more than 9,400 patents. The patent status in this field is very complicated, including Many industry giants, as well as Chinese companies that have just entered the field in recent years.
Core Patent Applicant Analysis
This report shows the strength of their patent status through indicators such as the number of patents of top-level patent applicants, patent citation networks, patent application countries, and current legal status. Through in-depth patent analysis, this report provides information from six major manufacturers. Patent overview (SanDisk/Western Digital, Micron Technology, SK Hynix, Toshiba, Samsung and Macronix International), including a detailed analysis of its patent dynamics, patent strategy, and related core patents for 3D NAND products.
The 3D NVM patent field includes many large-scale manufacturers. It is difficult for new-entry companies to enter this relatively closed field. However, Chinese companies have successfully entered the financial sector, or will change the further development of 3D NVM technology in the future.
It is worth noting that equipment manufacturers such as Applied Materials, Tokyo Electron and Lam Research also applied for nearly 20 3D NVM related patents.
Core Technology Analysis
The more than 3,400 patent families studied in this report have been classified according to storage type and main architecture.
This report reveals the patent applicant’s patent strategy and technology choices, and focuses on the current status of the major vendors’ patents based on storage type (Flash, MRAM, ReRAM, PCRAM) and architecture (vertical, Xpoint). Some vendors (such as Micron Technology) The main focus is on PCRAM, a storage type. We expect that they are also developing 3D Xpoint storage. Other vendors (such as SanDisk) are involved in various types of 3D NVM storage.
Focus on China
With the Chinese government's huge investment in storage, YMTC/YRST developed last-generation 3D NAND 36L last year, trying to catch up with the major vendors in the market. However, we need to find out where the intellectual property of Chinese manufacturers comes from. The status of patents related to China's storage sector (including 2D, 3D, DRAM, SRAM, Flash, and emerging storage) to understand the technology and patent development trends owned by Chinese manufacturers, including XMC, YRST, Tsinghua Unigroup, and SMIC.
This report also investigates the status of patent applications from major market players in China, including Samsung, SK Hynix, and Intel.