ZTE was cut off from the United States by the supply of core components, software, and technology, triggering social concerns for the Chinese chip industry.
Industrial research and analysis agency TrendForce pointed out on April 19 that China's memory chip industry is currently storing on the Yangtze River into the NAND Flash market, Hefei Changxin, which focuses on mobile memory chips, and Jinhua Integrated III, which focuses on ordinary memory chips. Large companies dominate. Based on the current progress of the three manufacturers, the trial production time is expected to be in the second half of 2018. The time of mass production may be in the first half of 2019. This indicates that 2019 will become the first year of China's memory chip production.
According to DRAMeXchange, a storage chip research organization owned by Jumbo Technology, from the perspective of the current layout of these three companies, the Hefei Changxin plant was completed and capped in June of last year. The third quarter of last year began moving into the testing machine. Hefei Changxin The current progress is roughly the same as Jinhua integration. It is planned to start trial production in the third quarter of this year. Mass production is tentatively scheduled for the first half of 2019. The process is later than expected. In addition, Hefei Changxin directly attacks the three largest DRAM factories (Samsung , SK Hynix and Micron) One of the most important products of LPDDR4 8Gb, the possibility of subsequent patent disputes is relatively high, to avoid this situation, in addition to actively accumulating patents, the initial may be locked in the Chinese market sales.
In contrast, Jinhua Integration, which focuses on general storage chips, announced in July 2016 that it will build a 12-inch wafer factory in Jinjiang City, Fujian Province, with an investment of approximately US$5.3 billion. From the current progress, the trial production of ordinary storage chips will be delayed. From the third quarter of this year, it plans to mass production in the first half of next year.
In addition, from the perspective of the development process of NAND Flash in China, at the end of December 2016, the National Memory Base, led by Yangtze River Storage, was formally started. It plans to build three 3D-NAND Flash plants in three phases. It was completed in September last year. It is expected to begin moving into the machine in the third quarter of 2018. The trial production will be carried out in the fourth quarter. The initial stage will not exceed 10,000 pieces. It is used to produce 32-layer 3D-NAND Flash products and is expected to After the maturity of the 64-story technology, the second and third phases of the production plan are then considered.
DRAMeXchange pointed out that observing China's memory chip manufacturers' R&D and output plans will be the first year of production of China's memory chip industry in 2019, but also because the two DRAM plants are not expected to have large initial production scale, it is difficult to shake the global market in the short term. The existing structure. Whether it is DRAM or NAND products, each one is in the initial test. Compared with the memory chip manufacturers who have been working for many years, they face more challenges. Therefore, it is not ruled out that the Chinese storage chip factory may be delayed in production time than expected. Sex.
In the long term, as China's memory chip products mature gradually, it is expected that the existing plants of the two DRAM manufacturers will gradually become fully productive from 2020 to 2021. Under the most optimistic projection, the two companies will collectively have about 250,000 pieces per month. The scale of investment may start to affect the supply of the global DRAM market. On the other hand, the Changjiang Storage Project has three plants, and the total production capacity may reach as high as 300,000 pieces per month. It is not ruled out that after Yangtze River’s storage has completed 64-layer product development, it may proceed. Large-scale production, and then in the next three to five years will have a significant impact on the supply of NAND Flash.