< 概要>
ROHM, a world-renowned semiconductor manufacturer, has newly developed a 650V voltage-tolerant IGBT with the industry's top low conduction loss*1 and high-speed switching characteristics. ※2 'RGTV Series (short-circuit withstand capability*3 retention version)' and 'RGW Series (high-speed switching version) ) ', A total of 21 models. These products are very suitable for UPS (uninterrupted power supply), welding machine and power control board industrial equipment, air conditioning, IH (induction heating) and other consumer electronics, general inverters and converters power Conversion.
The new series of products developed using thin wafer technology and ROHM unique structure have achieved top-level performance in terms of low conduction losses and high-speed switching characteristics with trade-offs. For example, when used in interleaved PFC circuits , Compared with the previous products, the efficiency is increased by 1.2% at light load and 0.3% at heavy load, which helps to further reduce the power consumption of the application. In addition, through the internal optimization of the components, smooth soft switching is achieved. Compared with the normal product with efficiency, it successfully reduces the voltage overshoot by 50%*4, thereby reducing the number of components that have been required for countermeasures in the past, and significantly reducing the design burden.
This series of products has been sold in October 2017 (sample price 400 yen ~ /: not including tax), and began production in December 2017 with a monthly production capacity of 100,000. The previous process The production base is Rinpoche Semiconductors Miyazaki Co., Ltd. (Miyazaki, Japan), and the post-production process is ROHM Integrated Systems (Thailand) (Thailand).
< 背景>
In recent years, with the increasing amount of data brought about by the IoT process, the demand for higher performance of the data center has become higher and higher. Not only the server itself, but also the UPS, which is indispensable for the stable supply of the main power supply, and the overall system performance Significant increase in consumption, further reducing power consumption has become an important issue.
In addition, in high-power applications using IGBTs, to ensure the reliability of the equipment, it is necessary to take measures against the overshoots that can cause component failures or device malfunctions when switching, simplifying the need for increasingly urgent.
1. To achieve the industry's top low conduction loss and high-speed switching performance
In this new series, thin wafer technology is used to make wafer thickness 15% thinner than previous products. In addition, ROHM's unique cell miniaturization structure is used to successfully achieve the industry's top low conduction losses (VCE(sat) = 1.5 V) and high-speed switching characteristics (tf = 30 ~ 40ns).
2. Implement soft switching to reduce the design burden of equipment
Through the internal optimization of the components, the soft switching of the ON/OFF smooth switching is realized. As a result, the voltage overshoot generated during the switching is reduced by 50% compared with the general product, and the external gate resistance for suppressing the overshoot can be reduced. The number of components such as snubber circuits, etc. When using IGBTs, the application end no longer needs the overshoot measures that are required in the past, which helps to reduce the design burden.
< 产品阵容>
The product lineup has added RGTV series featuring “short circuit withstand capability of 2μs” and RGW series featuring “high-speed switching performance” to support a wider range of applications.
RGTV Series (Short-circuit withstand capability retention version)
RGW Series (High Speed Switch Edition)
< 应用> Industrial equipment (UPS (uninterrupted power supply), welding machine, power control board, etc.), air conditioning, IH (induction heating), etc.
< 术语解说> *1 Transistor loss MOSFETs and IGBTs and other transistors due to the structure of the components, the voltage drop occurs when the current flows. The conduction loss is the loss due to the voltage drop of this component.
*2 IGBT: Insulated Gate Bipolar Transistor (IGBT) The high-speed switching characteristics of MOSFETs and the low conduction loss characteristics of bipolar transistors.
*3 Tolerance capability of short-circuit withstand capability to short-circuit caused by damage to components (2 points of the electronic circuit is connected with a low-resistance resistor).
*4 When the voltage overshoot switch is turned ON/OFF, a voltage exceeding the specified voltage value is generated. The voltage value temporarily exceeds the steady state value due to overshoot, and then returns to the near steady state value.