Write speed is 10,000 times faster than U disk | China's new storage technology breaks world standards

According to a report from Science and Technology Daily, recently, Zhang Wei, a professor at the School of Microelectronics of Fudan University, Zhou Peng's team achieved a technological breakthrough in the field of storage and created a third type of storage technology, which is 10,000 times faster than the current U disk. Users can decide the data storage time.

According to Professor Zhang Wei, there are currently two types of semiconductor charge storage technologies. The first type is volatile storage, such as computer memory. Data writing takes only a few nanoseconds, but the data disappears immediately after a power failure. The class is non-volatile storage, such as U disk, data writing takes a few microseconds to tens of microseconds, but no additional energy can be stored for about 10 years.

In the international community, the characteristics of 'write speed' and 'non-volatile' of storage devices have not always been available, and the two professors' R&D team not only achieved the 'memory level' of read and write speeds, but also the data storage. Time has made a breakthrough.

The data storage period of this kind of equipment can be adjusted as needed from 10 seconds to 10 years. It can naturally disappear after the expiration date of the data, and solves the contradiction between data transmission and confidentiality requirements under special scenarios.