Researchers at the Moscow State University of Nuclear Energy Research University of Russia's National Nuclear Research University collaborated with experts from the Institute of Metal Physics of the Russian Academy of Sciences' Siberian Branch to develop nanostructures that can increase the operating speed of high-frequency miniature circuits.
The nanostructure is a layered material composed of commonly used semiconductors. The researchers have chosen the appropriate conditions for manufacturing new nanostructures: the transition layer structure, the thickness and the composition of the active layer, and therefore, the structural quality is very high. In the case of indium content in the conductive layer, it helps to reduce the electron mass in the structure and increase their speed, so that the operation of the electronic instrument can also be accelerated.
However, the mechanical pressure of the adjacent lattice will be enhanced. Physicists have gradually increased the indium content of the active layer and also added a thick transition layer, thus solving the above problem.
