Recently, researchers at the University of Michigan developed a newly designed 'self-powered' CMOS image sensor whose pixels can simultaneously perform imaging and energy harvesting. This design may open the way for future compact self-powered cameras. TechCrunch's Devin Coldewey commented: 'The newly designed sensor is essentially a camera that never needs a battery or wireless power supply.'
The research team has developed prototype CMOS active pixels that can simultaneously perform imaging and energy harvesting without the need to introduce additional planar PN junctions whose pixels use structures that are available in standard CMOS processes. Lead author Euisik Yoon in thesis abstract Explained: 'Unlike conventional CMOS electron-based imaging pixels, the N-well region in the new sensor is used as a sensing node for image capture. We use hole-based imaging techniques while using the N-well region to over 94 The high fill factor of % collects energy.
'Highest power density'
Euisik Yoon said: 'We have successfully demonstrated that energy harvesting can achieve a power density of 998 pW/klux while capturing images at 74.67 pJ/pixel. Our current prototype equipment has achieved the highest power density and can be achieved with 15 The speed of the fps maintains its image capture without requiring an external power supply exceeding 60 klux of lighting.
According to the content of the paper, the new sensor will achieve a speed of 15 images per second under 'clear weather of 60,000 lux' and 7.5 sheets per second under normal daylight conditions (usually 20,000 to 30,000 lux). The speed of image acquisition. According to reports, researchers are currently focusing on the development of proof-of-concept chips. They point out in the paper that they have not optimized the power consumption of the sensor itself.
The paper concludes: 'We have proposed a prototype CMOS active pixel architecture that can simultaneously perform imaging and energy acquisition using a built-in embedded vertical PN junction in a standard CMOS process and use holes as imaging. Charge carriers, achieving a high fill factor of 94%. To prove the feasibility of this design, we produced a CIS chip and conducted an energy harvesting test with a power density of 998 pW/klux, which at the same time produced a quality factor of 74.67 pJ/. The pixel image, the pixel provides the highest power harvesting density.
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