There are two kinds of storage technologies. One is volatile storage represented by memory. The speed is very fast. However, data is not available after power-off and cannot be saved. The other is non-volatile, represented by U-disk. Storage, still able to save data after power failure, but the disadvantage is that the read and write speed is slow.
The team of the School of Microelectronics of Fudan University has developed a third storage technology that can guarantee high read and write speeds and ensure that data will not be lost after a power outage. According to team members, storage based on this technology Components, its write speed will be 10000 times faster than ordinary U disk.
And this technology has a more powerful place, that is, it can adjust the storage duration of data on demand. Its principle is that this technology uses multiple 2D semiconductor materials, as long as the ratio of materials is controlled, Controls the ratio of the write speed to the power-off data retention time.
At present, this technology still exists only in the laboratory. However, this technology was born in Fudan University in China. It seems that China's R&D has been in line with the world standard.
