Although China lags behind the world advanced level in the semiconductor chip industry, it is also advancing step by step and continuously making new breakthroughs.
According to media reports, On April 11th, the National Memory Base Project jointly invested by China National Integrated Circuit Industry Investment Fund of Ziguang Group, Hubei IC Industry Investment Fund and Hubei Branch Investment Co., Ltd. was officially installed on the chip production machine, marking the national storage base. From the stage of plant construction to the stage of mass production preparation.
Ziguang has 300mm flash memory fabs in Wuhan, Nanjing and Chengdu. The Wuhan plant was the first to start this time, and the 80 billion yuan of funds raised at the same time has also been fully implemented.
Gao Qiquan, executive vice president of China Unicom Group and Executive Chairman of the Yangtze River Storage Group, disclosed an exciting and exciting news: Yangtze River's 3D NAND flash memory has received the first order, a total of 10776 chips, will be used for 8GB USD memory card products.
Zhao Weiguo, Chairman of China Everbright Group and President of Changjiang Storage, emphasized in his speech that the national memory base project is a breakthrough in the scale development of China's IC flash memory chip industry, equivalent to an aircraft carrier in the Chinese science and technology field.
Prior to this, the base production plant was capped one month ahead of schedule in September 2017. The 32-story stacked three-dimensional NAND flash memory chip also achieved a major breakthrough in independent research and development. Now it has completed the import of chip production machines 20 days in advance. It is like an aircraft carrier outfit. At the end, it began to assemble weapons and ammunition.
At the end of this year, the base will realize small-scale mass production of domestic 3D flash memory, and it will take a long time to see smart phones based on domestic flash memory and SSD solid-state drives.
Next year, Yangtze River Storage will also start 64-layer stacking flash with a single capacity of 128Gb (16GB).
