In the micro-message news, Mr. Yan Shijing, Director of the Electronic Information Department of the Ministry of Industry and Information Technology, will serve as the joint chairman of Changjiang Storage. Before that, Peng Hongbing, deputy director of the Electronic Information Department, has already served as vice president of the major fund and chairman of the Changjiang River Storage Board of Supervisors. Currently, the appointment and dismissal of Yan Shijing has not been announced on the website of the Ministry of Industry and Information Technology. information.
Changjiang Storage was formally established on July 26, 2016 based on Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. The company's major shareholders include major funds and Ziguang Group, Hubei Branch Investment and Hubei Guoxin Industrial Investment Fund, etc. Ziguang Group's subsidiary. The company is seen as China's catch-up in the storage sector and challenges market leaders such as Samsung Electronics, Toshiba, SK Hynix, Micron and Intel, which have monopolized the global market in 2017. NAND flash memory market.
As a national storage project base, the Yangtze River has a total investment of 24 billion U.S. dollars. It is expected that the total production capacity will reach 300,000 pieces/month after the completion of the first phase of the project, and the annual production value will exceed 10 billion U.S. dollars.
It is reported that the Yangtze River’s first batch of US$4 million precision instruments arrived in Wuhan on April 5. Within the next two years, nearly 30,000 tons of precision instruments will be imported from all over the world to Han. Today, Yangtze River Storage’s Wuhan base chip production platform is officially established. Installation and installation indicate that the national storage base will enter the mass production preparation stage from the plant construction stage. China's first batch of 32-layer 3D NAND flash memory chips with completely independent intellectual property rights will be mass-produced during the year.
Zhao Weiguo, Chairman of China Everbright Group and President of Changjiang Storage, emphasized in his speech: The national memory base project is a breakthrough in the scale development of China's IC flash memory chip industry. It is equivalent to an aircraft carrier in the Chinese science and technology field. The production plant was in September last year. A month earlier, the 32-story three-dimensional NAND flash memory chip achieved a major breakthrough in its own R&D. Today, we implemented the chip production machine platform 20 days ahead of schedule. This is just like the aircraft carrier outfitting and the assembly of weapons and ammunition. The next step is to By the end of this year, mass production of chips will be realized and the voyage will be completed. It may soon be possible to see smartphones made with domestic 3D NAND flash memory chips available. In the next decade, Ziguang plans to invest at least US$100 billion, equivalent to spending an average of US$10 billion a year. We are in a great era. We believe that we will also produce great companies. Violet is actively fighting for this. We will certainly work hard to complete the historical mission entrusted by the country.
According to Ding Wenwu, president of the big fund, at present, China's general-purpose memory is all dependent on imports, and the national memory base project is progressing smoothly. The 32-layer three-dimensional flash memory chip has been successfully developed, and the development of memory development strategy has dawned, but this is only the first step of our long march. In the future, we will make great efforts in technology research and development, personnel training, cost control, operation management, and market competitiveness, and make great efforts. We hope that the Yangtze River’s storage in China’s memory industry and even the entire integrated circuit industry will develop an independent innovation. , breaking the monopoly of the new road.
It is reported that the National Memory Base successfully developed the first 32-layer three-dimensional NAND flash memory chip in China last year. This chip cost US$1 billion. The chip that was developed by the 1,000-person team lasted for two years was the most close to the international high-end level in China's manufacturing process. The mainstream chip will be expected to enable China to enter the first echelon of global memory chips, effectively enhancing the status of 'China Core' in the international market.