Graphene is a two-dimensional nanocarbon material with unique properties in electricity, optics, and thermals that can be applied to optoelectronic devices. Graphene-based blackbody emitters are also a promising silicon base in the near-infrared and mid-infrared bands. Chip emitters. Although the characteristics of graphene black body emitters under steady state conditions or relatively slow modulation (100 kHz) frequencies have been confirmed, the transient properties of these emitters at high speed modulation have not been reported so far. Optical communication of graphene-based emitters has never been confirmed.
Recently, the Japan Science and Technology Agency has shown a highly integrated, high-speed, silicon-on-chip, blackbody transmitter based on graphene, operating in the near-infrared region, including the telecommunications band. The transmitter has a fast response time of approximately 100 picoseconds. The graphene emitter was about 105 times higher. This response time has been verified on monolayer and multilayer graphene and can be controlled by the contact of graphene with the substrate, depending on the number of graphene layers. Personnel theoretically calculated the heat conduction equation by considering the thermal model of the emitter including graphene and the substrate, and clarified the mechanism of high-speed emission of the emitter. The simulation results show that the rapid response characteristics can be achieved not only through classical heat transfer, including graphene The in-plane thermal conduction and heat dissipation to the substrate can also be achieved by remote quantum heat transfer via the substrate surface polar phonons (SPoPh).
In addition, this study for the first time verified that graphene-based light emitters can perform real-time optical communication, demonstrating that graphene emitters are new light sources for optical communications. In addition, researchers used large-scale graphene grown by chemical vapor deposition (CVD) methods. An integrated two-dimensional array emitter was fabricated and its surface was modified in air. Due to its small package size and planar device structure, the emitter was directly coupled to the fiber.
Graphene emitters have great advantages over conventional compound semiconductor emitters because graphene emission is a simple fabrication process and can be coupled directly to silicon waveguides via evanescent fields, so they can be highly integrated on silicon chips. Since graphene can Implementing high-speed, small-size and silicon-based chip emitters is still a challenge for compound semiconductors, so graphene-based emitters can open up new avenues for highly integrated optoelectronics and silicon photonics.