The road to self-developed autonomous chips went further and further, which made Samsung very uneasy. In their view, the best attack is to increase investment, to shake up opponents in innovation, and to dig deeper into the moat.
just now, The Samsung Electronics official gave the latest news that they held a groundbreaking ceremony for the second NAND flash memory chip production line in Xi’an, China, this week, and the expansion of the entire plant will be completed by 2019.
At the end of August last year, Samsung Electronics announced that it had reached a cooperation agreement with the Shaanxi Provincial Government, which will expand the flash memory capacity of the Xi’an High-tech Zone factory, build a new phase II project, and invest US$7 billion in the next three years.
At present, the Xi'an plant is responsible for the packaging and testing of Samsung's flash memory chips, and its production capacity can be increased to 10 million solid-state drives per year.
