Topo Research Institute pointed out that compared to the current mainstream silicon wafers (Si), the third generation semiconductor materials SiC and GaN have high temperature resistance and are suitable for high frequency operation, in addition to high voltage resistance. Not only can the chip area be greatly reduced, but also the design of peripheral circuits can be simplified to reduce the module, system components, and the volume of the cooling system. In addition to the lightweight vehicle design, due to the low conduction of the third generation semiconductors The characteristics of resistance and low switching loss can also significantly reduce the energy conversion loss during vehicle operation, both of which contribute considerably to the improvement of the endurance of electric vehicles. Therefore, the technology and market development of SiC and GaN power components, and the Development is inseparable.
However, SiC materials are still in the verification and introduction stage. At this stage, the automotive field is only applied to racing cars. Therefore, the current global level of automotive power components, the use of SiC solution area is less than one thousandth. On the other hand, GaN power modules on the market today are fabricated on GaN-on-SiC and GaN-on-Si wafers. Among them, GaN-on-SiC has the most superior heat dissipation performance and is suitable for high temperature applications. The frequency of the operating environment, so the application of the 5G base station has the highest visibility. It is expected that the SiC substrate will enter the high-speed growth phase in the next five years through the verification of the depot and commercialization of 2020 5G.
In spite of the large area of GaN substrates, the cost remains high and the output value of GaN substrates is still lower than that of SiC substrates. However, the advantages of GaN in high-frequency operation are still the focus of major technology companies. The products use GaN-on-SiC technology. GaN-on-Si, through its cost advantage, has become the mainstream of GaN power components in the market. The applications for power management chips and charging systems required for automotive and smart phones are the most applicable. Growth.
Topo Industrial Research Institute pointed out that observing the development of the supply chain, as 5G and automotive technology are at the center of the industry's growth trend, the supply chain has developed a foundry model to provide OEM services for customers' SiC and GaN, changing the past. It is only supplied by manufacturers of integrated modules such as Cree, Infineon, Qorvo. In GaN part, TSMC and the world’s leading supplier of GaN-on-Si are available. The company specializes in GaN-on-SiC targeting 5G base stations. Business Opportunities. In addition, X-Fab, Han Lei and Huanyu also provide OEM services for SiC and GaN. With the foundry business, the market size of third-generation semiconductor materials will also be further expanded.
