At present, Lianxin can provide both Poly/SiON and High-K/Metal Gate technology.
According to reports, Lianxin's 28nm High-K/Metal Gate process adopts the world's most advanced Gate Last process technology, which can drastically reduce the gate leakage current, improve the transistor performance, and can be applied to more diverse applications. Electronic products.
In response to this technological breakthrough, Xu Zhiqing, CEO and Vice Chairman of Lianxin, said that he was very happy and he hoped to further strengthen cooperation with customers in the future and actively promote product volume production.
The Lianxin IC manufacturing project is located in Xiang'an District, Xiamen City, Fujian Province. The project covers an area of approximately 255,000 square meters and a total construction area of approximately 368,000 square meters. The project investment is approximately US$6.2 billion and is implemented in two phases. In the first phase, all plant and building facilities were built, and the equipment capacity of 25,000 pieces/month was installed; In the second stage, equipment was installed on the basis of the first stage to form a production capacity of 25,000 pieces/month. After the projects were all completed A 12-inch, 55-28nm wide integrated circuit chip with a total production capacity of 50,000 pieces/month.
It can be said that the Lianxin IC manufacturing project is the first 12-inch wafer fab joint venture between the two sides of the Taiwan Strait. It is also the largest single-item project in Fujian Province. Lianxin officially commenced operations in November 2016. Full speed to full capacity.