At the OCP Summit Open Computing Summit, Samsung Electronics demonstrated a DDR4 memory with a capacity of up to 64GB, based on its latest 16Gb (2GB) granules, and stated that it would be easy to achieve a single 256GB in the future.
This memory is RDIMM type for mainstream servers, rated frequency 2666MHz , Voltage is industry standard 1.2V, Particle manufacturing process is very advanced but not specifically disclosed (it should be 10nm level), known as Power consumption is 20% lower than previous 8Gb particles.
Samsung said This 64GB memory is a dual Rank configuration and is continuing to develop four Rank 128GB RDIMMs and eight Rank 256GB LRDIMMs.
Samsung also demonstrated new memory using the Intel Xeon and AMD EPYC platforms. With a 256GB memory stick, the total single-channel capacity can reach 3TB and 4TB respectively.
As for desktop, Samsung can use new particles to create a single 32GB UDIMM , Such a high-end system can have 256GB of memory, of course, the price will be very beautiful.
SK Hynix has also previously announced that it has completed a single Die 16Gb DDR4 particle, can also create 256GB of memory.
