The first 90nm! GF silicon photon breakthrough: distance up to 120 km

GlobalFoundries announced today that it has used 30-millimeter wafers, certified the industry's first 90-nm silicon photonics chip, and will use the newer 45-nm process to increase bandwidth and energy efficiency, and to promote next-generation optical interconnects in data centers and cloud applications.

Unlike traditional silicon interconnects that use copper electrical signals to transmit data, Silicon photonics technology uses fiber optic pulses to transmit data at greater speeds over longer distances and to reduce energy consumption to cope with large-scale data growth in the global communications infrastructure. Intel, IBM are all deeply researching silicon photonics technology.

GF said that its silicon photonics technology can integrate small optical components and circuits side-by-side on a single silicon chip, and the 'single-chip' solution uses standard silicon manufacturing technology to increase the efficiency of optical interconnect system deployment and reduce costs.

GF's latest silicon photonics products rely on the 90nm RF SOI process, and it has accumulated first-rate experience in manufacturing high-performance radio frequency (RF) chips. It can provide a solution of 30GHz bandwidth. The client data transmission rate reaches 800Gbps, and the transmission distance increases. To 120km.

The technology previously used wafers of 200 mm. Today, GF uses a wafer fab located in East Fishkill, New York, and has certified wafers of 300 mm diameter.

Larger size wafers help increase productivity and productivity. Reduce photon loss by 2 times , Expand coverage and achieve more efficient optical systems.

Cadence Design Systems uses a complete PDK for E/O/E, co-design, polarization, temperature and wavelength parameters to support 90nm technology, and provides differentiated photonic testing capabilities, from technology certification and modeling to MCM product testing. Test section.

GF's next-generation single-chip silicon photonics products will use the 45nm RF SOI process, which is planned to be put into production in 2019. The power consumption will be lower, the volume will be smaller, and the optical transceiver bandwidth will be higher to meet the next-generation terabit applications.


Silicon Photonics

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