Jibang Consulting: Server DRAM prices will continue to rise in the second quarter

According to the latest quotation of the semiconductor research center of Jibang Consulting, the first quarter server DRAM makers actively transferred to the specifications of the 32GB RDIMM module, and the original Server DRAM manufacturer to ensure the preferential price. Sales volume, quoted only to maintain about 4% gains; After entering the second quarter, as the demand for China's server marking and foundry warming, estimated server memory prices will continue to rise.

Liu Jiahao, a senior analyst at DRAMeXchange, pointed out that global server shipments will maintain a single-digit growth rate this year. China's growth rate in the second quarter will be the most impressive, reaching approximately 20%; if viewed from the server's memory supply side, In order to speed up the introduction of new platforms and the transition of high-capacity modules, large wafer fabs also offer more favorable prices on contract prices, which will increase the growth rate compared with last year.

Three major DRAM manufacturers adjust their output plans, and will begin mass production of 16Gb mono dies in the second half of the year.

In addition, Liu Jiahao analyzed supply chain conditions and pointed out that cloud computing and cloud storage are favored in recent years. On the one hand, the server industry benefits from the popularization of smart terminals. On the other hand, it comes from the impact of cloud computing on enterprise servers, which in turn drives demand for network services. Warm, and become the key to server market growth momentum.

In addition, in response to the increasing demand for global server memory and data centers, the three major DRAM manufacturers will increase the proportion of output of advanced processes in the second half of the year, driving the cost advantages and mounting requirements of high-capacity modules. The plant plans to start producing high-capacity 16Gb mono-die pellets in the third quarter in order to effectively increase the penetration rate of modules over 64GB capacity. In addition, the mainstream process of server memory in the second half of the year will be gradually transferred to the 17- and 18-nanometer nodes at high capacity. The gradual increase in the proportion of chip output and the improvement in the cost structure will accelerate the conversion speed of high-capacity modules.

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