The LSIC1MO120E0120 and LSIC1MO120E0160 silicon carbide MOSFETs have ultra-low on resistance (RDS(ON)) of only 120 milliohms and 160 milliohms, respectively. These silicon carbide MOSFETs can be used as power semiconductor switches in various power conversion systems. Block voltage, characteristic on-resistance and junction capacitance performance is significantly better than other silicon MOSFETs. It also combines high operating voltage and ultra-high switching speed, which is a traditional power transistor solution with similar current rating and packaged silicon IGBTs. Unable to reach.
Typical applications for these new silicon carbide MOSFETs include: • Electric vehicles • Industrial machinery • Renewable energy sources (such as solar inverters) • Medical equipment • Switching power supplies • Uninterruptible power supplies (UPS) • Motor drives • High-voltage DC/DC conversion Induction Heating
'These new silicon carbide MOSFETs provide power converter designers with advanced alternatives to traditional silicon-based transistors.' Michael Ketterer, product marketing manager for power semiconductors at Littelfuse, said, 'The inherent material properties and ultra-fast switching capabilities provide various optimizations. Opportunities for design, including the possibility to increase power density, increase efficiency and reduce material costs.
The new 1200V SiC MOSFETs offer the following key advantages: • Reduced number of passive filter components from the system level helps increase power density and optimize designs for high-frequency, high-efficiency applications. • Very low gate charge and output capacitance in combination with ultra Low on-resistance minimizes power dissipation, increases efficiency and reduces the size and complexity of the required cooling technology.
Availability
The LSIC1MO120E0120 and LSIC1MO120E0160 silicon carbide MOSFETs are packaged in a TO-247-3L package and are available in 450 tube packages.