Reporters learned from the Chinese Academy of Sciences, Hefei Institute of Physical Science, the Institute of solid state nanomaterials and nanotechnology research group Fei Guangtao researchers group, W-doped ordered vanadium dioxide nanowire array photovoltaic properties made the most recent progress. A few days ago related research results published in the international academic journal "Applied Surface Science".
The vanadium oxide material has high temperature coefficient of resistance and photothermal effect and has potential applications in infrared detection.With the advantages of narrow bandgap, good crystallinity and large specific surface area, vanadium oxide single-walled nanowire structure has the advantages of Good light responsivity and quantum efficiency and other advantages, is currently the main research direction of vanadium oxide infrared detection.However, the effective light area of vanadium oxide single nanowire is very small, resulting in very low photocurrent generated, limiting its application. Due to the integration effect and ordered arrangement of single nanowires, the electron has an extremely high transmission rate and low loss in the transmission process, so that the advantages of good photoelectric properties of the nanomaterials can be exerted, But also to maximize the effective increase in light area, you can get a higher photocurrent value, in order to achieve excellent optoelectronic response performance.
On the other hand, for semiconductors, elemental doping has the characteristic of reducing the recombination of photogenerated electron-hole pairs, increasing the conductivity, increasing the free carrier concentration and carrier lifetime, etc. Therefore, it is considered to enhance the photodetector light An effective way to respond.
To this end, Fei Guangtao's research group Master Xie Xuehe et al prepared high-quality two-dimensional ordered W-doped vanadium dioxide nanowire arrays. This ordered W-doped nanowire arrays exhibit millisecond fast infrared Response speed, and response rates up to 21.4 mA / W, the response rate after W doping increased nearly two orders of magnitude compared to a pure vanadium dioxide nanowire array detector with a responsivity of 0.29 mA / W.
The research results provide a direct and convenient path for the design of high-performance optoelectronic devices in the future.
