The market structure of radio frequency semiconductor technology has undergone significant changes in recent years.
Lateral diffusion-metal oxide semiconductor (LDMOS) technology has played a leading role in the RF semiconductor market for commercial applications for decades, and today the balance shifts and GaN-on-Si technology becomes Preferred technology to replace traditional LDMOS technology.
The performance advantages of GaN over GaN are well established over LDMOS - it delivers more than 70% power efficiency, 4 to 6 times more power per unit area, and scalability to high frequencies. Data have demonstrated that silicon-based gallium nitride meets stringent reliability requirements and offers RF performance and reliability comparable to or even surpassing expensive GaN-on-SiC replacement technologies.
Silicon-based gallium nitride has become a key moment in the evolution of commercial wireless infrastructure when it comes to cutting-edge technologies in the RF semiconductor industry. The proven performance advantages of silicon-based gallium nitride over LDMOS technology have propelled the company in the latest generation of 4G LTE Widely used in base stations and positioning it as the most viable enabling technology for the future 5G wireless infrastructure, its sensational market impact may well extend beyond mobile connectivity to include transportation, industrial and entertainment applications.
Going forward, the silicon-based GaN-based RF technology is expected to replace the legacy magnetron and spark plug technology and give full scope to the value and potential of commercial solid-state RF energy applications such as cooking, lighting and car ignition. We believe the above applications for energy / fuel efficiency As well as a qualitative leap in heating and lighting accuracy in the near future.
Manufacturing and cost-effective breakthrough
Given the unprecedented scale and pace of 5G infrastructure expansion, there is growing interest in the cost structure, manufacturing and rapid response of silicon-on-gallium nitride to LDMOS and silicon carbide gallium nitride-based gallium nitride, as well as supply chain flexibility and Inherent Reliability As an exceptional semiconductor technology unique to next-generation wireless infrastructure, Gallium Nitride-Gallium (GaN) is expected to deliver superior gallium nitride performance with an LDMOS cost structure and commercial manufacturing scalability to support large-scale needs.
MACOM and STMicroelectronics jointly announced today the plan to introduce silicon-based gallium nitride technology into the mainstream RF markets and applications, marking an important turning point in the GaN supply chain ecosystem that will combine the strength of MACOM's RF semiconductor technology with ST The perfect combination of scale and operational excellence in silicon wafer manufacturing, and we expect the agreement to expand MACOM supply sources as well as accelerate scale-up, increase capacity and cost structure optimization, and accelerate silicon-based GaN technology Mass market popularity.
For wireless network infrastructures, this collaboration is expected to cost-effectively deploy and extend silicon-based GaN technology into 4G LTE base stations and large-scale MIMO 5G antennas where the absolute density of antenna configurations has extremely high power and thermal performance Value, especially at higher frequencies, and with proper development, the power-efficiency advantages of silicon-based Gallium Nitride will have a profound impact on base station operating costs for wireless network operators. MACOM estimates that using an average energy rate of 0.1 US $ / kWh Model, converting more than $ 100 million in new mega-base stations deployed within a year to MACOM silicon-based GaN technology alone.
New Era
The evolution of silicon-based gallium nitride from early development to commercial-scale applications is undoubtedly one of the most disruptive technological innovations that have opened up a new era for the RF semiconductor industry.Through an agreement with ST, MACOM Gallium Nitride Technology will be uniquely positioned to meet the future requirements of 4G LTE and 5G wireless base station infrastructure for performance, cost structure, manufacturing capabilities and supply chain flexibility, with unlimited potential for solid-state RF energy applications. "Silicon-based Gallium Nitride Provides RF solutions have unmatched price / performance specifications for LDMOS and GaN-based Gallium Nitride competing technologies, which are just the tip of the iceberg.