In a nutshell, UFS 3.0 introduced the HS-G4 specification, boosting single channel bandwidth to 11.6Gbps, which is twice the performance of HS-G3 (UFS 2.1).
As the biggest advantage of UFS is dual-channel bi-directional read and write, so the interface bandwidth up to 23.2Gbps, which is 2.9GB / s.
In the design of the interconnect layer, the specification protocol of MIPI (Mobile Industry Processor Interface) is strictly adhered to. The physical layer is based on MIPI M-PHY v4.1 and the transport layer is based on MIPI UniProSM v1.8.
On the other hand, UFS 3.0 supports an increased number of partitions (UFS 2.1 is 8), improved error correction performance, and a voltage of 2.5V, supporting the latest NAND Flash media. For industrial applications such as auto-driving, operating temperatures from minus 40 degrees Celsius to high temperatures Celsius.
As for the UFSHCI v3.0 specification for the master reference for simplifying the design.
As for the UFS memory card v1.1, it is fully compatible with HS-Gear1 / 2/3, so storage speeds up to 1.5GB / s.
In addition, Samsung has announced it will debut the UFS 3.0 interface in the first quarter of 2018. Since the Snapdragon 845, Exynos 9810, etc. have no evidence of supporting the UFS 3.0 interface, are they compatible with the Galaxy S9 terminal or just the main control flash memory Such parts, temporarily unknown.